APT75GN120JDQ3

Microsemi Corporation APT75GN120JDQ3

Part Number:
APT75GN120JDQ3
Manufacturer:
Microsemi Corporation
Ventron No:
2493319-APT75GN120JDQ3
Description:
IGBT 1200V 124A 379W SOT227
ECAD Model:
Datasheet:
APT75GN120JDQ3

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Specifications
Microsemi Corporation APT75GN120JDQ3 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT75GN120JDQ3.
  • Factory Lead Time
    29 Weeks
  • Mount
    Chassis Mount, Screw
  • Mounting Type
    Chassis Mount
  • Package / Case
    ISOTOP
  • Number of Pins
    4
  • Weight
    30.000004g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Published
    1999
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    379W
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Pin Count
    4
  • Number of Elements
    1
  • Configuration
    Single
  • Case Connection
    ISOLATED
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    124A
  • Current - Collector Cutoff (Max)
    200μA
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    1.7V
  • Input Capacitance
    4.8nF
  • Turn On Time
    101 ns
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 75A
  • Continuous Collector Current
    124A
  • Turn Off Time-Nom (toff)
    925 ns
  • IGBT Type
    Trench Field Stop
  • NTC Thermistor
    No
  • Gate-Emitter Voltage-Max
    30V
  • Input Capacitance (Cies) @ Vce
    4.8nF @ 25V
  • Height
    9.6mm
  • Length
    38.2mm
  • Width
    25.4mm
  • RoHS Status
    RoHS Compliant
Description
APT75GN120JDQ3 Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet APT75GN120JDQ3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT75GN120JDQ3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT75GN120JDQ3 More Descriptions
Trans IGBT Chip N-CH 1200V 124A 379000mW 4-Pin SOT-227 Tube
IGBT Fieldstop Low Frequency Combi 1200 V 75 A SOT-227
Insulated Gate Bipolar Transistor, 124A I(C), 1200V V(BR)CES, N-Channel
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
IGBT MOD 1200V 124A 379W ISOTOP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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