APT64GA90LD30

Microsemi Corporation APT64GA90LD30

Part Number:
APT64GA90LD30
Manufacturer:
Microsemi Corporation
Ventron No:
3587311-APT64GA90LD30
Description:
IGBT 900V 117A 500W TO-264
ECAD Model:
Datasheet:
APT64GA90LD30

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Specifications
Microsemi Corporation APT64GA90LD30 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT64GA90LD30.
  • Factory Lead Time
    29 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-264-3, TO-264AA
  • Weight
    10.6g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    POWER MOS 8™
  • Published
    1999
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    LOW CONDUCTION LOSS
  • Max Power Dissipation
    500W
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    900V
  • Max Collector Current
    117A
  • Collector Emitter Breakdown Voltage
    900V
  • Collector Emitter Saturation Voltage
    2.5V
  • Turn On Time
    44 ns
  • Test Condition
    600V, 38A, 4.7 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.1V @ 15V, 38A
  • Continuous Collector Current
    117A
  • Turn Off Time-Nom (toff)
    352 ns
  • IGBT Type
    PT
  • Gate Charge
    162nC
  • Current - Collector Pulsed (Icm)
    193A
  • Td (on/off) @ 25°C
    18ns/131ns
  • Switching Energy
    1192μJ (on), 1088μJ (off)
  • Height
    5.21mm
  • Length
    26.49mm
  • Width
    20.5mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
APT64GA90LD30 Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT64GA90LD30 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT64GA90LD30. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT64GA90LD30 More Descriptions
Trans IGBT Chip N-CH 900V 117A 3-Pin(3 Tab) TO-264
IGBT PT MOS 8 Combi 900 V 64 A TO-264
Insulated Gate Bipolar Transistor - Power MOS 8
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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