APT50GP60B2DQ2G

Microsemi Corporation APT50GP60B2DQ2G

Part Number:
APT50GP60B2DQ2G
Manufacturer:
Microsemi Corporation
Ventron No:
3587329-APT50GP60B2DQ2G
Description:
IGBT 600V 150A 625W TMAX
ECAD Model:
Datasheet:
APT50GP60B2DQ2G

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Specifications
Microsemi Corporation APT50GP60B2DQ2G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT50GP60B2DQ2G.
  • Factory Lead Time
    30 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3 Variant
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    POWER MOS 7®
  • Published
    1999
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    625W
  • Current Rating
    150A
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    150A
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    55 ns
  • Test Condition
    400V, 50A, 4.3 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 50A
  • Turn Off Time-Nom (toff)
    200 ns
  • IGBT Type
    PT
  • Gate Charge
    165nC
  • Current - Collector Pulsed (Icm)
    190A
  • Td (on/off) @ 25°C
    19ns/85ns
  • Switching Energy
    465μJ (on), 635μJ (off)
  • Gate-Emitter Thr Voltage-Max
    6V
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
APT50GP60B2DQ2G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT50GP60B2DQ2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT50GP60B2DQ2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT50GP60B2DQ2G More Descriptions
Trans IGBT Chip N-CH 600V 150A 625000mW 3-Pin(3 Tab) T-MAX Tube
APT50GP60xx Series 600 V 150 A Through Hole Power MOS 7® IGBT - TO-247-3
IGBT PT MOS 7 Combi 600 V 50 A TO-247 MAX
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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