Alpha & Omega Semiconductor Inc. AOTF12N50
- Part Number:
- AOTF12N50
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2495352-AOTF12N50
- Description:
- MOSFET N-CH 500V 12A TO220F
- Datasheet:
- AOTF12N50
Alpha & Omega Semiconductor Inc. AOTF12N50 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AOTF12N50.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- ConfigurationSingle
- Power Dissipation-Max50W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation50W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs520m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1633pF @ 25V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Continuous Drain Current (ID)12A
- Gate to Source Voltage (Vgs)30V
- RoHS StatusROHS3 Compliant
AOTF12N50 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1633pF @ 25V.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
AOTF12N50 Features
a continuous drain current (ID) of 12A
a 500V drain to source voltage (Vdss)
AOTF12N50 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOTF12N50 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1633pF @ 25V.This device conducts a continuous drain current (ID) of 12A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
AOTF12N50 Features
a continuous drain current (ID) of 12A
a 500V drain to source voltage (Vdss)
AOTF12N50 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOTF12N50 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
AOTF12N50 More Descriptions
Clock Generator 4MHz to 32MHz Input 128MHz Output 8-Pin SOIC
500V N-Channel MOSFET, TO-220F-3, RoHSAlpha & Omega Semiconductor SCT
Power Field-Effect Transistor, 11A I(D), 700V, 0.87ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
500V N-Channel MOSFET, TO-220F-3, RoHSAlpha & Omega Semiconductor SCT
Power Field-Effect Transistor, 11A I(D), 700V, 0.87ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to AOTF12N50.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryTechnologyNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)RoHS StatusPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Lead FreeSurface MountReach Compliance CodeDrain Current-Max (Abs) (ID)View Compare
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AOTF12N5018 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3-55°C~150°C TJTube2009Active1 (Unlimited)FET General Purpose PowerMOSFET (Metal Oxide)1Single50W TcENHANCEMENT MODE50WN-Channel520m Ω @ 6A, 10V4.5V @ 250μA1633pF @ 25V12A Tc37nC @ 10V500V10V±30V12A30VROHS3 Compliant-------
-
18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3-55°C~150°C TJTube2009Active1 (Unlimited)-MOSFET (Metal Oxide)1-50W Tc-50WN-Channel720m Ω @ 6A, 10V4.5V @ 250μA2150pF @ 25V12A Tc48nC @ 10V650V10V±30V12A30VROHS3 CompliantNOT SPECIFIEDNOT SPECIFIEDContains Lead---
-
--Through HoleTO-220-3 Full Pack--55°C~150°C TJTube-Obsolete1 (Unlimited)-MOSFET (Metal Oxide)--50W Tc--N-Channel400m Ω @ 5.5A, 10V5V @ 250μA2333pF @ 100V11A Tc50nC @ 10V600V10V±30V---------
-
--Through HoleTO-220-3 Full Pack--55°C~150°C TJTube-Obsolete1 (Unlimited)FET General Purpose PowerMOSFET (Metal Oxide)-Single35W TcENHANCEMENT MODE-N-Channel520m Ω @ 6A, 10V5V @ 250μA1954pF @ 100V12A Tc50nC @ 10V600V10V±30V--RoHS Compliant---NOcompliant12A
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