AFG24S100HR5

NXP USA Inc. AFG24S100HR5

Part Number:
AFG24S100HR5
Manufacturer:
NXP USA Inc.
Ventron No:
3585873-AFG24S100HR5
Description:
IC TRANS RF LDMOS
ECAD Model:
Datasheet:
RF Products Selector Guide

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Specifications
NXP USA Inc. AFG24S100HR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFG24S100HR5.
  • Factory Lead Time
    16 Weeks
  • Package / Case
    NI-360H-2SB
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Voltage - Rated
    50V
  • Frequency
    1MHz~2.5GHz
  • Gain
    16.3dB
  • Power - Output
    100W
  • RoHS Status
    ROHS3 Compliant
Description
AFG24S100HR5 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFG24S100HR5 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFG24S100HR5. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
AFG24S100HR5 More Descriptions
RF MOSFET Transistors Wideband RF Power GaN on SiC Transistor, 1-2700 MHz, 125 W CW, 50 V
RF Power Transistor, 1 to 2.69 GHz, 125 W CW, 50 V, SOT1791-1, GaN
Operational Amplifier, Low Power, Rail to Rail Output, CMOS Op-Amp
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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