IDT, Integrated Device Technology Inc 71V424S10YG8
- Part Number:
- 71V424S10YG8
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3226880-71V424S10YG8
- Description:
- IC SRAM 4MBIT 10NS 36SOJ
- Datasheet:
- IDT Suffixes
IDT, Integrated Device Technology Inc 71V424S10YG8 technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 71V424S10YG8.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case36-BSOJ (0.400, 10.16mm Width)
- Supplier Device Package36-SOJ
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Asynchronous
- Voltage - Supply3V~3.6V
- Base Part NumberIDT71V424
- Memory Size4Mb 512K x 8
- Memory TypeVolatile
- Access Time10ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page10ns
- RoHS StatusROHS3 Compliant
71V424S10YG8 Overview
The package or case of the IDT71V424 memory chip is 36-BSOJ, with dimensions of 0.400 and 10.16mm in width. The packaging for this chip is Tape & Reel (TR), which is a popular method for protecting and transporting electronic components. This chip is currently active and available for purchase, making it a reliable choice for memory needs. The Moisture Sensitivity Level (MSL) for this chip is 3, meaning it can withstand up to 168 hours of exposure to moisture without any damage. The voltage supply for this chip ranges from 3V to 3.6V, making it compatible with a variety of devices. The base part number for this chip is IDT71V424 and it falls under the category of volatile memory, specifically SRAM. The memory interface for this chip is parallel, allowing for faster data transfer. The write cycle time for this chip is 10ns, making it a high-speed option for memory needs. Overall, the IDT71V424 is a reliable and efficient memory chip with a variety of features and specifications to meet the needs of various electronic devices.
71V424S10YG8 Features
Package / Case: 36-BSOJ (0.400, 10.16mm Width)
71V424S10YG8 Applications
There are a lot of Renesas Electronics America Inc.
71V424S10YG8 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
The package or case of the IDT71V424 memory chip is 36-BSOJ, with dimensions of 0.400 and 10.16mm in width. The packaging for this chip is Tape & Reel (TR), which is a popular method for protecting and transporting electronic components. This chip is currently active and available for purchase, making it a reliable choice for memory needs. The Moisture Sensitivity Level (MSL) for this chip is 3, meaning it can withstand up to 168 hours of exposure to moisture without any damage. The voltage supply for this chip ranges from 3V to 3.6V, making it compatible with a variety of devices. The base part number for this chip is IDT71V424 and it falls under the category of volatile memory, specifically SRAM. The memory interface for this chip is parallel, allowing for faster data transfer. The write cycle time for this chip is 10ns, making it a high-speed option for memory needs. Overall, the IDT71V424 is a reliable and efficient memory chip with a variety of features and specifications to meet the needs of various electronic devices.
71V424S10YG8 Features
Package / Case: 36-BSOJ (0.400, 10.16mm Width)
71V424S10YG8 Applications
There are a lot of Renesas Electronics America Inc.
71V424S10YG8 Memory applications.
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
71V424S10YG8 More Descriptions
IDT71V424S Series 4-Mbit (512 K x 8) 3 to 3.6 V 10 ns SMT Static RAM - SOJ-36
Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 3.6V 4Mb 180mA
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
IC FLASH 256M SPI 133MHZ 8WSON
Asynchronous Active J BEND 3-STATE (Memory Format) Memory 70C 3.6V 4Mb 180mA
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM
IC FLASH 256M SPI 133MHZ 8WSON
The three parts on the right have similar specifications to 71V424S10YG8.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusView Compare
-
71V424S10YG813 WeeksSurface Mount36-BSOJ (0.400, 10.16mm Width)36-SOJ0°C~70°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Asynchronous3V~3.6VIDT71V4244Mb 512K x 8Volatile10nsSRAMParallel10nsROHS3 Compliant-
-
13 WeeksSurface Mount44-BSOJ (0.400, 10.16mm Width)-0°C~70°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Asynchronous3V~3.6VIDT71V4164Mb 256K x 16Volatile-SRAMParallel12nsROHS3 Compliant
-
-Surface Mount48-TFBGA48-CABGA (9x9)0°C~70°C TATape & Reel (TR)Obsolete3 (168 Hours)SRAM - Asynchronous3V~3.6VIDT71V4164Mb 256K x 16Volatile10nsSRAMParallel10nsNon-RoHS Compliant
-
8 WeeksSurface Mount48-TFBGA--40°C~85°C TATrayActive3 (168 Hours)SRAM - Asynchronous3V~3.6VIDT71V4164Mb 256K x 16Volatile-SRAMParallel15nsROHS3 Compliant
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