7164S35DB

IDT, Integrated Device Technology Inc 7164S35DB

Part Number:
7164S35DB
Manufacturer:
IDT, Integrated Device Technology Inc
Ventron No:
3236457-7164S35DB
Description:
IC SRAM 64KBIT 35NS 28CDIP
ECAD Model:
Datasheet:
IDT Suffixes

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Specifications
IDT, Integrated Device Technology Inc 7164S35DB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 7164S35DB.
  • Factory Lead Time
    10 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    28-CDIP (0.600, 15.24mm)
  • Supplier Device Package
    28-CerDip
  • Operating Temperature
    -55°C~125°C TA
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    SRAM - Asynchronous
  • Voltage - Supply
    4.5V~5.5V
  • Memory Size
    64Kb 8K x 8
  • Memory Type
    Volatile
  • Access Time
    35ns
  • Memory Format
    SRAM
  • Memory Interface
    Parallel
  • Write Cycle Time - Word, Page
    35ns
  • RoHS Status
    Non-RoHS Compliant
Description
7164S35DB Overview
The mounting type for this particular device is Through Hole, meaning it can be securely attached to a circuit board using holes drilled through the board. The package or case size is 28-CDIP (0.600, 15.24mm), indicating that it is a ceramic dual inline package with a width of 0.600 inches or 15.24 millimeters. The supplier device package is 28-CerDip, which is a ceramic dual inline package with 28 pins. This device is designed to operate in extreme temperatures, with an operating temperature range of -55°C to 125°C. It is packaged in a tube for easy handling and transportation. The technology used for this device is SRAM - Asynchronous, a type of memory that allows for fast data access. The memory size is 64Kb 8K x 8, meaning it can store 64 kilobits of data in an 8K by 8 format. The access time for this device is 35ns, indicating how quickly data can be retrieved from the memory. The memory format is SRAM, confirming that this device is a type of static random access memory. The write cycle time for this device is 35ns, specifically for word and page writes.

7164S35DB Features
Package / Case: 28-CDIP (0.600, 15.24mm)


7164S35DB Applications
There are a lot of Renesas Electronics America Inc.
7164S35DB Memory applications.


eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
7164S35DB More Descriptions
SRAM Chip Async Single 5V 64K-Bit 8K x 8 35ns 28-Pin CDIP
Active THROUGH-HOLE 3-STATE 2011 (Memory Format) Memory 125C 5V 64kb 0.02A
5.0V 8K x 8 Asynchronous Static RAM
IC SRAM 64KBIT PARALLEL 28CERDIP
SRAM 64K(8KX8) BICMOS STAT RAM
Product Comparison
The three parts on the right have similar specifications to 7164S35DB.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Memory Size
    Memory Type
    Access Time
    Memory Format
    Memory Interface
    Write Cycle Time - Word, Page
    RoHS Status
    View Compare
  • 7164S35DB
    7164S35DB
    10 Weeks
    Through Hole
    28-CDIP (0.600, 15.24mm)
    28-CerDip
    -55°C~125°C TA
    Tube
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    64Kb 8K x 8
    Volatile
    35ns
    SRAM
    Parallel
    35ns
    Non-RoHS Compliant
    -
  • 7164S85DB
    15 Weeks
    Through Hole
    28-CDIP (0.600, 15.24mm)
    28-CerDip
    -55°C~125°C TA
    Tube
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    64Kb 8K x 8
    Volatile
    85ns
    SRAM
    Parallel
    85ns
    Non-RoHS Compliant
  • 7164L35TDB
    15 Weeks
    Through Hole
    28-CDIP (0.300, 7.62mm)
    28-CDIP
    -55°C~125°C TA
    Tube
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    64Kb 8K x 8
    Volatile
    35ns
    SRAM
    Parallel
    35ns
    Non-RoHS Compliant
  • 7164L20TDB
    15 Weeks
    Through Hole
    28-CDIP (0.300, 7.62mm)
    28-CDIP
    -55°C~125°C TA
    Tube
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    64Kb 8K x 8
    Volatile
    20ns
    SRAM
    Parallel
    20ns
    Non-RoHS Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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