IDT, Integrated Device Technology Inc 7164S35DB
- Part Number:
- 7164S35DB
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3236457-7164S35DB
- Description:
- IC SRAM 64KBIT 35NS 28CDIP
- Datasheet:
- IDT Suffixes
IDT, Integrated Device Technology Inc 7164S35DB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 7164S35DB.
- Factory Lead Time10 Weeks
- Mounting TypeThrough Hole
- Package / Case28-CDIP (0.600, 15.24mm)
- Supplier Device Package28-CerDip
- Operating Temperature-55°C~125°C TA
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Memory Size64Kb 8K x 8
- Memory TypeVolatile
- Access Time35ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page35ns
- RoHS StatusNon-RoHS Compliant
7164S35DB Overview
The mounting type for this particular device is Through Hole, meaning it can be securely attached to a circuit board using holes drilled through the board. The package or case size is 28-CDIP (0.600, 15.24mm), indicating that it is a ceramic dual inline package with a width of 0.600 inches or 15.24 millimeters. The supplier device package is 28-CerDip, which is a ceramic dual inline package with 28 pins. This device is designed to operate in extreme temperatures, with an operating temperature range of -55°C to 125°C. It is packaged in a tube for easy handling and transportation. The technology used for this device is SRAM - Asynchronous, a type of memory that allows for fast data access. The memory size is 64Kb 8K x 8, meaning it can store 64 kilobits of data in an 8K by 8 format. The access time for this device is 35ns, indicating how quickly data can be retrieved from the memory. The memory format is SRAM, confirming that this device is a type of static random access memory. The write cycle time for this device is 35ns, specifically for word and page writes.
7164S35DB Features
Package / Case: 28-CDIP (0.600, 15.24mm)
7164S35DB Applications
There are a lot of Renesas Electronics America Inc.
7164S35DB Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The mounting type for this particular device is Through Hole, meaning it can be securely attached to a circuit board using holes drilled through the board. The package or case size is 28-CDIP (0.600, 15.24mm), indicating that it is a ceramic dual inline package with a width of 0.600 inches or 15.24 millimeters. The supplier device package is 28-CerDip, which is a ceramic dual inline package with 28 pins. This device is designed to operate in extreme temperatures, with an operating temperature range of -55°C to 125°C. It is packaged in a tube for easy handling and transportation. The technology used for this device is SRAM - Asynchronous, a type of memory that allows for fast data access. The memory size is 64Kb 8K x 8, meaning it can store 64 kilobits of data in an 8K by 8 format. The access time for this device is 35ns, indicating how quickly data can be retrieved from the memory. The memory format is SRAM, confirming that this device is a type of static random access memory. The write cycle time for this device is 35ns, specifically for word and page writes.
7164S35DB Features
Package / Case: 28-CDIP (0.600, 15.24mm)
7164S35DB Applications
There are a lot of Renesas Electronics America Inc.
7164S35DB Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
7164S35DB More Descriptions
SRAM Chip Async Single 5V 64K-Bit 8K x 8 35ns 28-Pin CDIP
Active THROUGH-HOLE 3-STATE 2011 (Memory Format) Memory 125C 5V 64kb 0.02A
5.0V 8K x 8 Asynchronous Static RAM
IC SRAM 64KBIT PARALLEL 28CERDIP
SRAM 64K(8KX8) BICMOS STAT RAM
Active THROUGH-HOLE 3-STATE 2011 (Memory Format) Memory 125C 5V 64kb 0.02A
5.0V 8K x 8 Asynchronous Static RAM
IC SRAM 64KBIT PARALLEL 28CERDIP
SRAM 64K(8KX8) BICMOS STAT RAM
The three parts on the right have similar specifications to 7164S35DB.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusView Compare
-
7164S35DB10 WeeksThrough Hole28-CDIP (0.600, 15.24mm)28-CerDip-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8Volatile35nsSRAMParallel35nsNon-RoHS Compliant-
-
15 WeeksThrough Hole28-CDIP (0.600, 15.24mm)28-CerDip-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8Volatile85nsSRAMParallel85nsNon-RoHS Compliant
-
15 WeeksThrough Hole28-CDIP (0.300, 7.62mm)28-CDIP-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8Volatile35nsSRAMParallel35nsNon-RoHS Compliant
-
15 WeeksThrough Hole28-CDIP (0.300, 7.62mm)28-CDIP-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V64Kb 8K x 8Volatile20nsSRAMParallel20nsNon-RoHS Compliant
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