IDT, Integrated Device Technology Inc 7164L25YG
- Part Number:
- 7164L25YG
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3233367-7164L25YG
- Description:
- IC SRAM 64KBIT 25NS 28SOJ
- Datasheet:
- IDT Suffixes
IDT, Integrated Device Technology Inc 7164L25YG technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 7164L25YG.
- Factory Lead Time15 Weeks
- Mounting TypeSurface Mount
- Package / Case28-BSOJ (0.300, 7.62mm Width)
- Operating Temperature0°C~70°C TA
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Base Part NumberIDT7164
- Memory Size64Kb 8K x 8
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page25ns
- RoHS StatusROHS3 Compliant
7164L25YG Overview
This product operates at a temperature range of 0°C to 70°C and is packaged in a tube. It is currently an active product and utilizes SRAM technology in an asynchronous manner. The voltage supply for this product is between 4.5V and 5.5V. It is a volatile memory type and has a SRAM format. The memory interface is parallel and has a write cycle time of 25ns for both words and pages. This product is also compliant with ROHS3 standards.
7164L25YG Features
Package / Case: 28-BSOJ (0.300, 7.62mm Width)
7164L25YG Applications
There are a lot of Renesas Electronics America Inc.
7164L25YG Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
This product operates at a temperature range of 0°C to 70°C and is packaged in a tube. It is currently an active product and utilizes SRAM technology in an asynchronous manner. The voltage supply for this product is between 4.5V and 5.5V. It is a volatile memory type and has a SRAM format. The memory interface is parallel and has a write cycle time of 25ns for both words and pages. This product is also compliant with ROHS3 standards.
7164L25YG Features
Package / Case: 28-BSOJ (0.300, 7.62mm Width)
7164L25YG Applications
There are a lot of Renesas Electronics America Inc.
7164L25YG Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
7164L25YG More Descriptions
5.0V 8K x 8 Asynchronous Static RAM
IC FLASH RAM 32MIT PARAL 66SCSP
SRAM 64K(8KX8) BICMOS STAT RAM
IC FLASH RAM 32MIT PARAL 66SCSP
SRAM 64K(8KX8) BICMOS STAT RAM
The three parts on the right have similar specifications to 7164L25YG.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusSupplier Device PackageAccess TimeView Compare
-
7164L25YG15 WeeksSurface Mount28-BSOJ (0.300, 7.62mm Width)0°C~70°C TATubeActive3 (168 Hours)SRAM - Asynchronous4.5V~5.5VIDT716464Kb 8K x 8VolatileSRAMParallel25nsROHS3 Compliant---
-
15 WeeksSurface Mount28-BSOJ (0.300, 7.62mm Width)-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SRAM - Asynchronous4.5V~5.5VIDT716464Kb 8K x 8VolatileSRAMParallel25nsROHS3 Compliant28-SOJ25ns
-
15 WeeksThrough Hole28-CDIP (0.300, 7.62mm)-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V-64Kb 8K x 8VolatileSRAMParallel35nsNon-RoHS Compliant28-CDIP35ns
-
15 WeeksThrough Hole28-CDIP (0.600, 15.24mm)-55°C~125°C TATubeActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5V-64Kb 8K x 8VolatileSRAMParallel20nsNon-RoHS Compliant28-CerDip20ns
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