IDT, Integrated Device Technology Inc 70V3579S4DR
- Part Number:
- 70V3579S4DR
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3237992-70V3579S4DR
- Description:
- IC SRAM 1.125MBIT 4.2NS 208QFP
- Datasheet:
- IDT Suffixes
IDT, Integrated Device Technology Inc 70V3579S4DR technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 70V3579S4DR.
- Mounting TypeSurface Mount
- Package / Case208-BFQFP
- Operating Temperature0°C~70°C TA
- PackagingTray
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySRAM - Dual Port, Synchronous
- Voltage - Supply3.15V~3.45V
- Base Part NumberIDT70V3579
- Memory Size1.125Mb 32K x 36
- Memory TypeVolatile
- Access Time4.2ns
- Memory FormatSRAM
- Memory InterfaceParallel
- RoHS StatusNon-RoHS Compliant
70V3579S4DR Overview
This product is a 208-BFQFP package with an Obsolete part status. It has a Moisture Sensitivity Level (MSL) of 3, meaning it can be exposed to moisture for up to 168 hours. The technology used is SRAM - Dual Port, Synchronous. The voltage supply range is 3.15V to 3.45V. The base part number is IDT70V3579. It has a memory size of 1.125Mb, with a configuration of 32K x 36. The memory type is Volatile and the interface is Parallel. This product is also Non-RoHS Compliant.
70V3579S4DR Features
Package / Case: 208-BFQFP
70V3579S4DR Applications
There are a lot of Renesas Electronics America Inc.
70V3579S4DR Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
This product is a 208-BFQFP package with an Obsolete part status. It has a Moisture Sensitivity Level (MSL) of 3, meaning it can be exposed to moisture for up to 168 hours. The technology used is SRAM - Dual Port, Synchronous. The voltage supply range is 3.15V to 3.45V. The base part number is IDT70V3579. It has a memory size of 1.125Mb, with a configuration of 32K x 36. The memory type is Volatile and the interface is Parallel. This product is also Non-RoHS Compliant.
70V3579S4DR Features
Package / Case: 208-BFQFP
70V3579S4DR Applications
There are a lot of Renesas Electronics America Inc.
70V3579S4DR Memory applications.
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
70V3579S4DR More Descriptions
32K x 36 Sync, 3.3V Dual-Port RAM, Pipelined, Interleaved I/O's
IC SRAM 1.125M PARALLEL 208PQFP
SRAM 32K X 36 SYNCH DPRAM
IC SRAM 1.125M PARALLEL 208PQFP
SRAM 32K X 36 SYNCH DPRAM
The three parts on the right have similar specifications to 70V3579S4DR.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceRoHS StatusFactory Lead TimeSupplier Device PackageView Compare
-
70V3579S4DRSurface Mount208-BFQFP0°C~70°C TATrayObsolete3 (168 Hours)SRAM - Dual Port, Synchronous3.15V~3.45VIDT70V35791.125Mb 32K x 36Volatile4.2nsSRAMParallelNon-RoHS Compliant---
-
Surface Mount256-LBGA0°C~70°C TATape & Reel (TR)Active4 (72 Hours)SRAM - Dual Port, Synchronous3.15V~3.45VIDT70V3379576Kb 32K x 18Volatile4.2nsSRAMParallelNon-RoHS Compliant13 Weeks256-CABGA (17x17)
-
Surface Mount256-LBGA0°C~70°C TATrayActive4 (72 Hours)SRAM - Dual Port, Synchronous3.15V~3.45VIDT70V3379576Kb 32K x 18Volatile5nsSRAMParallelNon-RoHS Compliant10 Weeks256-CABGA (17x17)
-
Surface Mount256-LBGA0°C~70°C TATrayActive3 (168 Hours)SRAM - Dual Port, Synchronous3.15V~3.45VIDT70V33891.125Mb 64K x 18Volatile4.2nsSRAMParallelROHS3 Compliant10 Weeks256-CABGA (17x17)
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