70P264L55BYGI

IDT, Integrated Device Technology Inc 70P264L55BYGI

Part Number:
70P264L55BYGI
Manufacturer:
IDT, Integrated Device Technology Inc
Ventron No:
3245602-70P264L55BYGI
Description:
IC SRAM 256KBIT 55NS 81CABGA
ECAD Model:
Datasheet:
70P264L55BYGI

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Specifications
IDT, Integrated Device Technology Inc 70P264L55BYGI technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 70P264L55BYGI.
  • Mounting Type
    Surface Mount
  • Package / Case
    81-TFBGA
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Technology
    SRAM - Dual Port, Asynchronous
  • Voltage - Supply
    1.7V~1.9V
  • Memory Size
    256Kb 16K x 16
  • Memory Type
    Volatile
  • Memory Format
    SRAM
  • Memory Interface
    Parallel
  • Write Cycle Time - Word, Page
    55ns
Description
70P264L55BYGI Overview
The package or case of this particular electronic component is an 81-TFBGA, which stands for Thin Fine Ball Grid Array. This package type is commonly used for integrated circuits and offers a higher pin count compared to other packages. The operating temperature range for this component is -40°C to 85°C, making it suitable for a wide range of applications. The packaging for this component is in a tray form, which is a type of packaging that allows for easy handling and storage. However, it is important to note that this particular part is now considered obsolete, meaning it is no longer being manufactured. Its moisture sensitivity level is 3, which means it can withstand up to 168 hours of exposure to moisture before it becomes damaged. This component utilizes SRAM technology, specifically dual port and asynchronous, which allows for faster data access. It requires a voltage supply of 1.7V to 1.9V and is classified as a volatile memory type, meaning it requires continuous power to retain its data. The memory format for this component is SRAM, which stands for Static Random Access Memory. The write cycle time for this component is 55 nanoseconds, making it a relatively fast option for data storage.

70P264L55BYGI Features
Package / Case: 81-TFBGA


70P264L55BYGI Applications
There are a lot of Renesas Electronics America Inc.
70P264L55BYGI Memory applications.


eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
70P264L55BYGI More Descriptions
SRAM Chip Async Dual 1.8V 256K-bit 16K x 16 55ns 81-Pin CABGA Tray
16K x16 Low Power Dual-Port RAM
IC SRAM 256K PARALLEL 81CABGA
Product Comparison
The three parts on the right have similar specifications to 70P264L55BYGI.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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