6116SA55TDB

IDT, Integrated Device Technology Inc 6116SA55TDB

Part Number:
6116SA55TDB
Manufacturer:
IDT, Integrated Device Technology Inc
Ventron No:
3235646-6116SA55TDB
Description:
IC SRAM 16KBIT 55NS 24CDIP
ECAD Model:
Datasheet:
6116SA55TDB

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Specifications
IDT, Integrated Device Technology Inc 6116SA55TDB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 6116SA55TDB.
  • Factory Lead Time
    15 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    24-CDIP (0.600, 15.24mm)
  • Supplier Device Package
    24-CDIP
  • Operating Temperature
    -55°C~125°C TA
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    SRAM - Asynchronous
  • Voltage - Supply
    4.5V~5.5V
  • Base Part Number
    IDT6116
  • Memory Size
    16Kb 2K x 8
  • Memory Type
    Volatile
  • Access Time
    55ns
  • Memory Format
    SRAM
  • Memory Interface
    Parallel
  • Write Cycle Time - Word, Page
    55ns
  • RoHS Status
    ROHS3 Compliant
Description
6116SA55TDB Overview
The Supplier Device Package for this particular device is a 24-CDIP, which refers to the type of packaging used to protect and store the device. The Operating Temperature range for this device is -55°C to 125°C TA, indicating the temperature range in which it can safely operate. The device is packaged in a Tube, which is a common form of packaging for electronic components. The Technology used for this device is SRAM - Asynchronous, which refers to the type of memory technology used. The Base Part Number for this device is IDT6116, which is a unique identifier for this specific device. The Memory Size is 16Kb 2K x 8, indicating that the device has a memory capacity of 16 kilobits and is organized into 2 kilobytes of 8 bits each. The Access Time for this device is 55ns, which refers to the time it takes for the device to retrieve data. The Memory Format is SRAM, indicating that the device uses Static Random Access Memory technology. The Memory Interface is Parallel, which refers to the way in which data is transferred between the device and other components. Finally, the Write Cycle Time for this device is 55ns, indicating the time it takes to write data to the device in a single word or page.

6116SA55TDB Features
Package / Case: 24-CDIP (0.600, 15.24mm)


6116SA55TDB Applications
There are a lot of Renesas Electronics America Inc.
6116SA55TDB Memory applications.


networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
6116SA55TDB More Descriptions
5.0V 2K x 8 Asynchronous Static RAM
IC SRAM 16KBIT PARALLEL 24CDIP
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
Product Comparison
The three parts on the right have similar specifications to 6116SA55TDB.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Base Part Number
    Memory Size
    Memory Type
    Access Time
    Memory Format
    Memory Interface
    Write Cycle Time - Word, Page
    RoHS Status
    View Compare
  • 6116SA55TDB
    6116SA55TDB
    15 Weeks
    Through Hole
    24-CDIP (0.600, 15.24mm)
    24-CDIP
    -55°C~125°C TA
    Tube
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    55ns
    SRAM
    Parallel
    55ns
    ROHS3 Compliant
    -
  • 6116LA25SOGI8
    15 Weeks
    Surface Mount
    24-SOIC (0.295, 7.50mm Width)
    24-SOIC
    -40°C~85°C TA
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    25ns
    SRAM
    Parallel
    25ns
    ROHS3 Compliant
  • 6116LA25SOG8
    10 Weeks
    Surface Mount
    24-SOIC (0.295, 7.50mm Width)
    24-SOIC
    0°C~70°C TA
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    25ns
    SRAM
    Parallel
    25ns
    ROHS3 Compliant
  • 6116LA120DB
    15 Weeks
    Through Hole
    24-CDIP (0.600, 15.24mm)
    -
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    -
    SRAM
    Parallel
    120ns
    Non-RoHS Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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