6116SA20TDB

IDT, Integrated Device Technology Inc 6116SA20TDB

Part Number:
6116SA20TDB
Manufacturer:
IDT, Integrated Device Technology Inc
Ventron No:
3235755-6116SA20TDB
Description:
IC SRAM 16KBIT 20NS 24CDIP
ECAD Model:
Datasheet:
6116SA20TDB

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Specifications
IDT, Integrated Device Technology Inc 6116SA20TDB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 6116SA20TDB.
  • Factory Lead Time
    15 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    24-CDIP (0.300, 7.62mm)
  • Operating Temperature
    -55°C~125°C TA
  • Packaging
    Tray
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    SRAM - Asynchronous
  • Voltage - Supply
    4.5V~5.5V
  • Base Part Number
    IDT6116
  • Memory Size
    16Kb 2K x 8
  • Memory Type
    Volatile
  • Memory Format
    SRAM
  • Memory Interface
    Parallel
  • Write Cycle Time - Word, Page
    20ns
  • RoHS Status
    Non-RoHS Compliant
Description
6116SA20TDB Overview
The Operating Temperature for the IDT6116, a 16Kb 2K x 8 Volatile SRAM with a parallel Memory Interface, is -55°C~125°C TA. This means that the component can operate within this wide temperature range without any adverse effects. Additionally, the Part Status for this device is Active, indicating that it is currently in production and readily available for purchase. The Moisture Sensitivity Level (MSL) for the IDT6116 is 1, which means it has an unlimited shelf life and can be stored indefinitely without any special precautions. The Technology used in this SRAM is Asynchronous, and the Voltage - Supply range is 4.5V~5.5V. With a fast Write Cycle Time of 20ns for both Word and Page, the IDT6116 offers efficient and reliable memory storage for a variety of applications.

6116SA20TDB Features
Package / Case: 24-CDIP (0.300, 7.62mm)


6116SA20TDB Applications
There are a lot of Renesas Electronics America Inc.
6116SA20TDB Memory applications.


telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
6116SA20TDB More Descriptions
5.0V 2K x 8 Asynchronous Static RAM
IC SRAM 16KBIT PARALLEL 24CDIP
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
Product Comparison
The three parts on the right have similar specifications to 6116SA20TDB.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Base Part Number
    Memory Size
    Memory Type
    Memory Format
    Memory Interface
    Write Cycle Time - Word, Page
    RoHS Status
    Supplier Device Package
    Access Time
    View Compare
  • 6116SA20TDB
    6116SA20TDB
    15 Weeks
    Through Hole
    24-CDIP (0.300, 7.62mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    20ns
    Non-RoHS Compliant
    -
    -
    -
  • 6116LA25SOG
    10 Weeks
    Surface Mount
    24-SOIC (0.295, 7.50mm Width)
    0°C~70°C TA
    Tube
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    25ns
    ROHS3 Compliant
    24-SOIC
    25ns
  • 6116LA25DB
    15 Weeks
    Through Hole
    24-CDIP (0.600, 15.24mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    25ns
    Non-RoHS Compliant
    -
    -
  • 6116LA150DB
    15 Weeks
    Through Hole
    24-CDIP (0.600, 15.24mm)
    -55°C~125°C TA
    Tray
    Active
    1 (Unlimited)
    SRAM - Asynchronous
    4.5V~5.5V
    IDT6116
    16Kb 2K x 8
    Volatile
    SRAM
    Parallel
    150ns
    Non-RoHS Compliant
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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