IDT, Integrated Device Technology Inc 6116SA150DB
- Part Number:
- 6116SA150DB
- Manufacturer:
- IDT, Integrated Device Technology Inc
- Ventron No:
- 3235651-6116SA150DB
- Description:
- IC SRAM 16KBIT 120NS 24CDIP
- ECAD Model:
-
- Datasheet:
- 6116SA150DB
IDT, Integrated Device Technology Inc 6116SA150DB technical specifications, attributes, parameters and parts with similar specifications to IDT, Integrated Device Technology Inc 6116SA150DB.
- Factory Lead Time15 Weeks
- Mounting TypeThrough Hole
- Package / Case24-CDIP (0.600, 15.24mm)
- Operating Temperature-55°C~125°C TA
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologySRAM - Asynchronous
- Voltage - Supply4.5V~5.5V
- Base Part NumberIDT6116
- Memory Size16Kb 2K x 8
- Memory TypeVolatile
- Memory FormatSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page150ns
- RoHS StatusNon-RoHS Compliant
6116SA150DB Overview
This product features a Through Hole mounting type and a 24-CDIP (0.600, 15.24mm) package/case, making it suitable for use in a variety of applications. It is packaged in trays and has a Moisture Sensitivity Level (MSL) of 1 (Unlimited), ensuring its durability and reliability. The technology utilized is SRAM - Asynchronous, providing fast and efficient performance. With a voltage supply range of 4.5V~5.5V, this product is compatible with a wide range of power sources. It has a memory size of 16Kb 2K x 8 and is designed in a SRAM format. The Write Cycle Time for both word and page is 150ns, ensuring quick and efficient data storage. Please note that this product is Non-RoHS Compliant.
6116SA150DB Features
Package / Case: 24-CDIP (0.600, 15.24mm)
6116SA150DB Applications
There are a lot of Renesas Electronics America Inc.
6116SA150DB Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
This product features a Through Hole mounting type and a 24-CDIP (0.600, 15.24mm) package/case, making it suitable for use in a variety of applications. It is packaged in trays and has a Moisture Sensitivity Level (MSL) of 1 (Unlimited), ensuring its durability and reliability. The technology utilized is SRAM - Asynchronous, providing fast and efficient performance. With a voltage supply range of 4.5V~5.5V, this product is compatible with a wide range of power sources. It has a memory size of 16Kb 2K x 8 and is designed in a SRAM format. The Write Cycle Time for both word and page is 150ns, ensuring quick and efficient data storage. Please note that this product is Non-RoHS Compliant.
6116SA150DB Features
Package / Case: 24-CDIP (0.600, 15.24mm)
6116SA150DB Applications
There are a lot of Renesas Electronics America Inc.
6116SA150DB Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
6116SA150DB More Descriptions
SRAM Chip Async Single 5V 16K-Bit 2K x 8 150ns 24-Pin CDIP
5.0V 2K x 8 Asynchronous Static RAM
IC SRAM 16KBIT PARALLEL 24CDIP
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
6116 - STATIC RAM 16K (2K X 8-BI
5.0V 2K x 8 Asynchronous Static RAM
IC SRAM 16KBIT PARALLEL 24CDIP
SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
6116 - STATIC RAM 16K (2K X 8-BI
The three parts on the right have similar specifications to 6116SA150DB.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusView Compare
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6116SA150DB15 WeeksThrough Hole24-CDIP (0.600, 15.24mm)-55°C~125°C TATrayActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5VIDT611616Kb 2K x 8VolatileSRAMParallel150nsNon-RoHS Compliant- -
15 WeeksThrough Hole24-CDIP (0.600, 15.24mm)-55°C~125°C TATrayActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5VIDT611616Kb 2K x 8VolatileSRAMParallel120nsNon-RoHS Compliant
-
15 WeeksThrough Hole24-CDIP (0.600, 15.24mm)-55°C~125°C TATrayActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5VIDT611616Kb 2K x 8VolatileSRAMParallel25nsNon-RoHS Compliant
-
15 WeeksThrough Hole24-CDIP (0.600, 15.24mm)-55°C~125°C TATrayActive1 (Unlimited)SRAM - Asynchronous4.5V~5.5VIDT611616Kb 2K x 8VolatileSRAMParallel150nsNon-RoHS Compliant
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