Vishay Semiconductor Diodes Division 3N253-M4/51

Name: 3N253-M4/51
Brand: Vishay Semiconductor Diodes Division
SKU: 2410953-3N253-M4/51
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 3N253-M4/51

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 2410953-3N253-M4/51

Description:: RECT BRIDGE 1PHASE 50V 2A KBPM

ECAD Model:

Datasheet:: 2KBP005M-10M, 3N253-259

Specifications

Vishay Semiconductor Diodes Division 3N253-M4/51 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division 3N253-M4/51.

Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
4-SIP, KBPM
Diode Element Material
SILICON
Operating Temperature
-55°C~165°C TJ
Packaging
Tray
Published
2016
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
Technology
Standard
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSIP-W4
Number of Elements
4
Configuration
BRIDGE, 4 ELEMENTS
Diode Type
Single Phase
Current - Reverse Leakage @ Vr
5μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.1V @ 3.14A
Case Connection
ISOLATED
Output Current-Max
2A
Current - Average Rectified (Io)
2A
Number of Phases
1
Non-rep Pk Forward Current-Max
60A
Voltage - Peak Reverse (Max)
50V
Breakdown Voltage-Min
50V
RoHS Status
ROHS3 Compliant

Description

3N253-M4/51 Overview
A 4-SIP, KBPM package is a type of electronic component.Through Hole is the mounting method for the device.Its normal operation is ensured by operating at a temperature of -55°C~165°C TJ.Bridge rectifier can support a maximum output voltage of 2A.

3N253-M4/51 Features
4-SIP, KBPM package
operating at a temperature of -55°C~165°C TJ
the maximum output voltage of 2A

3N253-M4/51 Applications
There are a lot of Vishay Semiconductor Diodes Division
3N253-M4/51 applications of bridge rectifiers.

Working peak reverse voltages 200 to 1 ,000 volts
Military and other high-reliability applications
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers

3N253-M4/51 More Descriptions

BRIDGE RECT 1PHASE 50V 2A KBPM
2A,50V,GLASS,IN-LINE BRIDGE

Product Comparison

The three parts on the right have similar specifications to 3N253-M4/51.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Output Current-Max

Current - Average Rectified (Io)

Number of Phases

Non-rep Pk Forward Current-Max

Voltage - Peak Reverse (Max)

Breakdown Voltage-Min

RoHS Status

Surface Mount

JESD-609 Code

Terminal Finish

Base Part Number

Contact Plating

Number of Pins

Pbfree Code

Subcategory

Pin Count

Qualification Status

Element Configuration

Max Reverse Leakage Current

Max Surge Current

Forward Voltage

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Height

Length

Width

HTS Code

View Compare
3N253-M4/51

Vishay Semiconductor Diodes Division

22 Weeks

Through Hole

Through Hole

4-SIP, KBPM

SILICON

-55°C~165°C TJ

Tray

2016

Obsolete

1 (Unlimited)

4

EAR99

UL RECOGNIZED

Standard

WIRE

NOT SPECIFIED

unknown

NOT SPECIFIED

R-PSIP-W4

4

BRIDGE, 4 ELEMENTS

Single Phase

5μA @ 50V

1.1V @ 3.14A

ISOLATED

2A

2A

1

60A

50V

50V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
3N254

Fairchild/ON Semiconductor

-

-

Through Hole

4-SIP, KBPM

SILICON

-55°C~150°C TJ

Tube

2010

Obsolete

1 (Unlimited)

4

-

-

Standard

-

NOT SPECIFIED

unknown

NOT SPECIFIED

R-PSIP-T4

4

BRIDGE, 4 ELEMENTS

Single Phase

5μA @ 100V

1.1V @ 3.14A

-

2A

2A

1

60A

100V

100V

Non-RoHS Compliant

NO

e0

Tin/Lead (Sn/Pb)

3N254

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3N253-M4/51 vs 3N254
3N258-E4/51

Vishay Semiconductor Diodes Division

22 Weeks

Through Hole

Through Hole

4-SIP, KBPM

SILICON

-55°C~165°C TJ

Tray

2011

Obsolete

1 (Unlimited)

4

-

UL RECOGNIZED

Standard

-

NOT APPLICABLE

unknown

NOT APPLICABLE

-

1

-

Single Phase

5μA @ 800V

1.1V @ 3.14A

ISOLATED

2A

2A

1

-

-

-

ROHS3 Compliant

-

e4

-

3N258

Silver

4

yes

Bridge Rectifier Diodes

4

Not Qualified

Single

5μA

60A

1.1V

5μA

800V

60A

60A

11.68mm

15.24mm

5.08mm

-

3N253-M4/51 vs 3N258-E4/51
3N251-M4/51

Vishay Semiconductor Diodes Division

22 Weeks

Through Hole

Through Hole

4-SIP, KBPM

SILICON

-55°C~150°C TJ

Tray

2016

Obsolete

1 (Unlimited)

4

EAR99

UL RECOGNIZED

Standard

WIRE

-

unknown

-

R-PSIP-W4

4

BRIDGE, 4 ELEMENTS

Single Phase

5μA @ 800V

1V @ 1A

ISOLATED

1.5A

1.5A

1

60A

800V

800V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

8541.10.00.80

3N253-M4/51 vs 3N251-M4/51