Vishay Semiconductor Diodes Division 3N248-M4/51

Name: 3N248-M4/51
Brand: Vishay Semiconductor Diodes Division
SKU: 2410978-3N248-M4/51
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 3N248-M4/51

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 2410978-3N248-M4/51

Description:: BRIDGE RECT 1.5A 200V KBPM

ECAD Model:

Datasheet:: 3N248-M4/51

Specifications

Vishay Semiconductor Diodes Division 3N248-M4/51 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division 3N248-M4/51.

Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
4-SIP, KBPM
Diode Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tray
Published
2016
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
Technology
Standard
Terminal Form
WIRE
Reach Compliance Code
unknown
JESD-30 Code
R-PSIP-W4
Number of Elements
4
Configuration
BRIDGE, 4 ELEMENTS
Diode Type
Single Phase
Current - Reverse Leakage @ Vr
5μA @ 200V
Voltage - Forward (Vf) (Max) @ If
1V @ 1A
Case Connection
ISOLATED
Output Current-Max
1.5A
Current - Average Rectified (Io)
1.5A
Number of Phases
1
Non-rep Pk Forward Current-Max
60A
Voltage - Peak Reverse (Max)
200V
Breakdown Voltage-Min
200V
RoHS Status
ROHS3 Compliant

Description

3N248-M4/51 Overview
The component is available as a 4-SIP, KBPM package.A Through Hole mounting method is used for the device.In order for rectifier to operate normally, rectifier must be kept at a temperature of -55°C~150°C TJ.A maximum voltage of 1.5A can be supported by it.

3N248-M4/51 Features
4-SIP, KBPM package
operating at a temperature of -55°C~150°C TJ
the maximum output voltage of 1.5A

3N248-M4/51 Applications
There are a lot of Vishay Semiconductor Diodes Division
3N248-M4/51 applications of bridge rectifiers.

Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
Transportation – Traction rectifiers and auxiliary rectifiers

3N248-M4/51 More Descriptions

1.5A,200V,GLASS,IN-LINE BRIDGE
BRIDGE RECT 1P 200V 1.5A KBPM

Product Comparison

The three parts on the right have similar specifications to 3N248-M4/51.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Technology

Terminal Form

Reach Compliance Code

JESD-30 Code

Number of Elements

Configuration

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Output Current-Max

Current - Average Rectified (Io)

Number of Phases

Non-rep Pk Forward Current-Max

Voltage - Peak Reverse (Max)

Breakdown Voltage-Min

RoHS Status

Contact Plating

Number of Pins

JESD-609 Code

Pbfree Code

Subcategory

Base Part Number

Pin Count

Element Configuration

Max Reverse Leakage Current

Max Surge Current

Forward Voltage

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Height

Length

Width

Radiation Hardening

Terminal Finish

View Compare
3N248-M4/51

Vishay Semiconductor Diodes Division

22 Weeks

Through Hole

Through Hole

4-SIP, KBPM

SILICON

-55°C~150°C TJ

Tray

2016

Obsolete

1 (Unlimited)

4

EAR99

UL RECOGNIZED

Standard

WIRE

unknown

R-PSIP-W4

4

BRIDGE, 4 ELEMENTS

Single Phase

5μA @ 200V

1V @ 1A

ISOLATED

1.5A

1.5A

1

60A

200V

200V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
3N246-E4/51

Vishay Semiconductor Diodes Division

22 Weeks

Through Hole

Through Hole

4-SIP, KBPM

SILICON

-55°C~150°C TJ

Tray

2011

Obsolete

1 (Unlimited)

4

EAR99

UL RECOGNIZED

Standard

-

-

-

1

-

Single Phase

5μA @ 50V

1V @ 1A

ISOLATED

-

1.5A

1

-

-

-

ROHS3 Compliant

Silver

4

e4

yes

Bridge Rectifier Diodes

3N246

4

Single

5μA

60A

1.3V

5μA

50V

60A

60A

11.68mm

15.24mm

5.08mm

No

-

3N248-M4/51 vs 3N246-E4/51
3N247-E4/45

Vishay Semiconductor Diodes Division

-

Through Hole

Through Hole

4-SIP, KBPM

SILICON

-55°C~150°C TJ

Tube

2011

Obsolete

1 (Unlimited)

4

EAR99

UL RECOGNIZED

Standard

-

-

-

1

-

Single Phase

5μA @ 100V

1V @ 1A

ISOLATED

-

1.5A

1

-

-

-

ROHS3 Compliant

-

4

e4

yes

Bridge Rectifier Diodes

3N247

4

Single

5μA

60A

1.3V

5μA

100V

60A

-

11.68mm

15.24mm

5.08mm

No

Silver (Ag)

3N248-M4/51 vs 3N247-E4/45
3N249-E4/45

Vishay Semiconductor Diodes Division

-

Through Hole

Through Hole

4-SIP, KBPM

SILICON

-55°C~150°C TJ

Tube

2008

Obsolete

1 (Unlimited)

4

-

UL RECOGNIZED

Standard

-

-

-

1

-

Single Phase

5μA @ 400V

1V @ 1A

ISOLATED

-

1.5A

1

-

-

-

ROHS3 Compliant

-

4

e4

yes

Bridge Rectifier Diodes

3N249

4

Single

5μA

60A

1.3V

5μA

400V

60A

-

11.68mm

15.24mm

5.08mm

No

Silver (Ag)

3N248-M4/51 vs 3N249-E4/45