3KBP08M-M4/51

Vishay Semiconductor Diodes Division 3KBP08M-M4/51

Part Number:
3KBP08M-M4/51
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
2410968-3KBP08M-M4/51
Description:
BRIDGE RECT 3A 800V KBPM
ECAD Model:
Datasheet:
3KBP08M-M4/51

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Comments
Specifications
Vishay Semiconductor Diodes Division 3KBP08M-M4/51 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division 3KBP08M-M4/51.
  • Factory Lead Time
    22 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    4-SIP, KBPM
  • Diode Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tray
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Additional Feature
    UL RECOGNIZED
  • HTS Code
    8541.10.00.80
  • Technology
    Standard
  • Terminal Form
    WIRE
  • Reach Compliance Code
    unknown
  • JESD-30 Code
    R-PSIP-W4
  • Number of Elements
    4
  • Configuration
    BRIDGE, 4 ELEMENTS
  • Diode Type
    Single Phase
  • Current - Reverse Leakage @ Vr
    5μA @ 800V
  • Voltage - Forward (Vf) (Max) @ If
    1.05V @ 3A
  • Case Connection
    ISOLATED
  • Output Current-Max
    3A
  • Current - Average Rectified (Io)
    3A
  • Number of Phases
    1
  • Non-rep Pk Forward Current-Max
    80A
  • Voltage - Peak Reverse (Max)
    50V
  • Breakdown Voltage-Min
    800V
  • RoHS Status
    ROHS3 Compliant
Description
3KBP08M-M4/51 Overview
Basically, rectifier is a type of electronic component that is available in a 4-SIP, KBPM package.The mounting method of the device is Through Hole.Operating at the temperature of -55°C~150°C TJ ensures its normal operation.The maximum output voltage of 3A can be supported by it.

3KBP08M-M4/51 Features
4-SIP, KBPM package
operating at a temperature of -55°C~150°C TJ
the maximum output voltage of 3A


3KBP08M-M4/51 Applications
There are a lot of Vishay Semiconductor Diodes Division
3KBP08M-M4/51 applications of bridge rectifiers.


Controlled avalanche characteristics
Working peak reverse voltages 200 to 1 ,000 volts
Military and other high-reliability applications
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
3KBP08M-M4/51 More Descriptions
BRIDGE RECT 1PHASE 50V 3A KBPM
3A,800V,GLASS,IN-LINE BRIDGE
Product Comparison
The three parts on the right have similar specifications to 3KBP08M-M4/51.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    HTS Code
    Technology
    Terminal Form
    Reach Compliance Code
    JESD-30 Code
    Number of Elements
    Configuration
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Output Current-Max
    Current - Average Rectified (Io)
    Number of Phases
    Non-rep Pk Forward Current-Max
    Voltage - Peak Reverse (Max)
    Breakdown Voltage-Min
    RoHS Status
    Number of Pins
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Subcategory
    Pin Count
    Element Configuration
    Max Reverse Leakage Current
    Max Surge Current
    Forward Voltage
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Peak Non-Repetitive Surge Current
    Height
    Length
    Width
    Radiation Hardening
    View Compare
  • 3KBP08M-M4/51
    3KBP08M-M4/51
    22 Weeks
    Through Hole
    Through Hole
    4-SIP, KBPM
    SILICON
    -55°C~150°C TJ
    Tray
    2016
    Obsolete
    1 (Unlimited)
    4
    EAR99
    UL RECOGNIZED
    8541.10.00.80
    Standard
    WIRE
    unknown
    R-PSIP-W4
    4
    BRIDGE, 4 ELEMENTS
    Single Phase
    5μA @ 800V
    1.05V @ 3A
    ISOLATED
    3A
    3A
    1
    80A
    50V
    800V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 3KBP01M-M4/51
    22 Weeks
    Through Hole
    Through Hole
    4-SIP, KBPM
    SILICON
    -55°C~150°C TJ
    Tray
    2016
    Obsolete
    1 (Unlimited)
    4
    EAR99
    UL RECOGNIZED
    -
    Standard
    WIRE
    unknown
    R-PSIP-W4
    4
    BRIDGE, 4 ELEMENTS
    Single Phase
    5μA @ 100V
    1.05V @ 3A
    ISOLATED
    3A
    3A
    1
    80A
    50V
    100V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 3KBP04M-M4/51
    22 Weeks
    Through Hole
    Through Hole
    4-SIP, KBPM
    SILICON
    -55°C~150°C TJ
    Tray
    2016
    Obsolete
    1 (Unlimited)
    4
    EAR99
    UL RECOGNIZED
    8541.10.00.80
    Standard
    WIRE
    unknown
    R-PSIP-W4
    4
    BRIDGE, 4 ELEMENTS
    Single Phase
    5μA @ 400V
    1.05V @ 3A
    ISOLATED
    3A
    3A
    1
    80A
    50V
    400V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 3KBP06M-E4/45
    -
    Through Hole
    Through Hole
    4-SIP, KBPM
    SILICON
    -55°C~150°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    4
    -
    UL RECOGNIZED
    -
    Standard
    WIRE
    -
    -
    1
    -
    Single Phase
    5μA @ 600V
    1.05V @ 3A
    ISOLATED
    3A
    3A
    1
    -
    -
    -
    ROHS3 Compliant
    4
    e4
    yes
    Silver (Ag)
    Bridge Rectifier Diodes
    4
    Single
    5μA
    80A
    1.05V
    5μA
    600V
    80A
    11.68mm
    15.24mm
    5.08mm
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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