ON Semiconductor 2SK932-22-TB-E
- Part Number:
- 2SK932-22-TB-E
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2495765-2SK932-22-TB-E
- Description:
- JFET N-CH 50MA 200MW CP
- Datasheet:
- 2SK932-22-TB-E
ON Semiconductor 2SK932-22-TB-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SK932-22-TB-E.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin/Bismuth (Sn/Bi)
- Max Power Dissipation200mW
- Pin Count3
- Element ConfigurationSingle
- FET TypeN-Channel
- Drain to Source Voltage (Vdss)15V
- Continuous Drain Current (ID)50mA
- Gate to Source Voltage (Vgs)-15V
- Drain to Source Breakdown Voltage15V
- Current - Drain (Idss) @ Vds (Vgs=0)7.3mA @ 5V
- Voltage - Cutoff (VGS off) @ Id200mV @ 100μA
- Height1.1mm
- Length2.9mm
- Width1.5mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SK932-22-TB-E Description
2SK932-22-TB-E is a type of N-channel JFET provided by ON Semiconductor. It is a reliable and useful electronic component that can be easily used in a variety of electronic circuits, from amplifiers to switching circuits. Since the junction field effect transistor (JFET) operation depends on the electric field generated by the input gate voltage, it is called the field effect. The field effect is to change the direction or magnitude of the applied electric field perpendicular to the semiconductor surface to control the density or type of majority carriers in the semiconductor conductive layer (channel).
2SK932-22-TB-E Features
Adoption of FBET process Small Ciss Very low noise figure Large | yfs | Package: TO-92-3
2SK932-22-TB-E Applications
AM tuner RF amp Low-noise amp HF low-noise amp
2SK932-22-TB-E is a type of N-channel JFET provided by ON Semiconductor. It is a reliable and useful electronic component that can be easily used in a variety of electronic circuits, from amplifiers to switching circuits. Since the junction field effect transistor (JFET) operation depends on the electric field generated by the input gate voltage, it is called the field effect. The field effect is to change the direction or magnitude of the applied electric field perpendicular to the semiconductor surface to control the density or type of majority carriers in the semiconductor conductive layer (channel).
2SK932-22-TB-E Features
Adoption of FBET process Small Ciss Very low noise figure Large | yfs | Package: TO-92-3
2SK932-22-TB-E Applications
AM tuner RF amp Low-noise amp HF low-noise amp
2SK932-22-TB-E More Descriptions
2SK932-22-TB-E N-channel JFET Transistor; 15 V; Idss 7.3 - 12mA; 3-Pin CP
N-Channel JFET, 15V, 5 to 24mA, 50mS, CP
Jfet, N-Ch, -15V, Sc-59-3 |Onsemi 2SK932-22-TB-E
CoC and 2-years warranty / RFQ for pricing
Small Signal Field-Effect Transistor
JFET, N-CH, -15V, SC-59-3; Breakdown Voltage Vbr: -15V; Zero Gate Voltage Drain Current Idss Min: 7.3mA; Zero Gate Voltage Drain Current Idss Max: 24mA; Gate-Source Cutoff Voltage Vgs(off) Max: -1.4V; Transistor Case Style: S
N-Channel JFET, 15V, 5 to 24mA, 50mS, CP
Jfet, N-Ch, -15V, Sc-59-3 |Onsemi 2SK932-22-TB-E
CoC and 2-years warranty / RFQ for pricing
Small Signal Field-Effect Transistor
JFET, N-CH, -15V, SC-59-3; Breakdown Voltage Vbr: -15V; Zero Gate Voltage Drain Current Idss Min: 7.3mA; Zero Gate Voltage Drain Current Idss Max: 24mA; Gate-Source Cutoff Voltage Vgs(off) Max: -1.4V; Transistor Case Style: S
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