2SK932-22-TB-E

ON Semiconductor 2SK932-22-TB-E

Part Number:
2SK932-22-TB-E
Manufacturer:
ON Semiconductor
Ventron No:
2495765-2SK932-22-TB-E
Description:
JFET N-CH 50MA 200MW CP
ECAD Model:
Datasheet:
2SK932-22-TB-E

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Specifications
ON Semiconductor 2SK932-22-TB-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SK932-22-TB-E.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e6
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Bismuth (Sn/Bi)
  • Max Power Dissipation
    200mW
  • Pin Count
    3
  • Element Configuration
    Single
  • FET Type
    N-Channel
  • Drain to Source Voltage (Vdss)
    15V
  • Continuous Drain Current (ID)
    50mA
  • Gate to Source Voltage (Vgs)
    -15V
  • Drain to Source Breakdown Voltage
    15V
  • Current - Drain (Idss) @ Vds (Vgs=0)
    7.3mA @ 5V
  • Voltage - Cutoff (VGS off) @ Id
    200mV @ 100μA
  • Height
    1.1mm
  • Length
    2.9mm
  • Width
    1.5mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2SK932-22-TB-E Description
2SK932-22-TB-E is a type of N-channel JFET provided by ON Semiconductor. It is a reliable and useful electronic component that can be easily used in a variety of electronic circuits, from amplifiers to switching circuits. Since the junction field effect transistor (JFET) operation depends on the electric field generated by the input gate voltage, it is called the field effect. The field effect is to change the direction or magnitude of the applied electric field perpendicular to the semiconductor surface to control the density or type of majority carriers in the semiconductor conductive layer (channel).

2SK932-22-TB-E Features
Adoption of FBET process Small Ciss Very low noise figure Large | yfs | Package: TO-92-3

2SK932-22-TB-E Applications
AM tuner RF amp Low-noise amp HF low-noise amp
2SK932-22-TB-E More Descriptions
2SK932-22-TB-E N-channel JFET Transistor; 15 V; Idss 7.3 - 12mA; 3-Pin CP
N-Channel JFET, 15V, 5 to 24mA, 50mS, CP
Jfet, N-Ch, -15V, Sc-59-3 |Onsemi 2SK932-22-TB-E
CoC and 2-years warranty / RFQ for pricing
Small Signal Field-Effect Transistor
JFET, N-CH, -15V, SC-59-3; Breakdown Voltage Vbr: -15V; Zero Gate Voltage Drain Current Idss Min: 7.3mA; Zero Gate Voltage Drain Current Idss Max: 24mA; Gate-Source Cutoff Voltage Vgs(off) Max: -1.4V; Transistor Case Style: S
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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