TOSHIBA 2SK2662

Name: 2SK2662
Brand: TOSHIBA
SKU: 5746692-2SK2662
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2SK2662

Manufacturer:: TOSHIBA

Ventron No:: 5746692-2SK2662

Description:: in stock

ECAD Model:

Datasheet:: 2SK2662

Specifications

TOSHIBA 2SK2662 technical specifications, attributes, parameters and parts with similar specifications to TOSHIBA 2SK2662.

region:
hk
Shipment :
DHL
Packaging:
TO220F
Distributor:
Ventron
Condition:
New

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy Toshiba Semiconductor and Storage 2SK2662.

2SK2662 More Descriptions

N CHANNEL MOS TYPE (HIGH SPEED, HIHG VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
TOSHIBA TO-220F
MOSFET, N LOGIC TO-220 ISOL; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissi

Product Comparison

The three parts on the right have similar specifications to 2SK2662.

Image

Part Number

Manufacturer

region:

Shipment :

Packaging:

Distributor:

Contact Email:

Condition:

Factory Lead Time

Contact Plating

Mount

Package / Case

Number of Pins

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Terminal Position

Terminal Form

Frequency

Number of Elements

Element Configuration

Operating Mode

Current - Test

Transistor Application

Transistor Type

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

FET Technology

Noise Figure

Voltage - Test

Radiation Hardening

RoHS Status

Mounting Type

Supplier Device Package

Operating Temperature

Power - Max

FET Type

Input Capacitance (Ciss) (Max) @ Vds

Input Capacitance

Current - Drain (Idss) @ Vds (Vgs=0)

Voltage - Cutoff (VGS off) @ Id

Voltage - Breakdown (V(BR)GSS)

Current Drain (Id) - Max

Transistor Element Material

JESD-609 Code

Pbfree Code

ECCN Code

Resistance

Terminal Finish

HTS Code

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Power Dissipation-Max

Power Dissipation

Turn On Delay Time

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Height

Length

Width

Lead Free

View Compare
2SK2662

TOSHIBA

hk

DHL

TO220F

Ventron

sales@ventronchip.com

New

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2SK209-GR(TE85L,F)

Toshiba Semiconductor and Storage

-

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-

52 Weeks

Copper, Silver, Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

Cut Tape (CT)

2009

Active

1 (Unlimited)

3

125°C

-55°C

150mW

DUAL

GULL WING

1kHz

1

Single

DEPLETION MODE

500μA

AMPLIFIER

N-Channel JFET

6.5mA

-1.5V

JUNCTION

1dB

10V

No

RoHS Compliant

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2SK2662 vs 2SK209-GR(TE85L,F)
2SK208-GR(TE85L,F)

Toshiba Semiconductor and Storage

-

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52 Weeks

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

Cut Tape (CT)

2009

Active

1 (Unlimited)

-

125°C

-55°C

100mW

-

-

-

-

Single

-

-

-

-

6.5mA

-

-

-

-

No

RoHS Compliant

Surface Mount

SC-59

125°C TJ

100mW

N-Channel

8.2pF @ 10V

8.2pF

2.6mA @ 10V

400mV @ 100nA

50V

6.5mA

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2SK2662 vs 2SK208-GR(TE85L,F)
2SK2731T146

Rohm Semiconductor

-

-

-

-

-

-

-

Copper, Silver, Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

Tape & Reel (TR)

1998

Not For New Designs

1 (Unlimited)

3

-

-

-

DUAL

GULL WING

-

1

Single

ENHANCEMENT MODE

-

SWITCHING

-

200mA

20V

-

-

-

No

ROHS3 Compliant

Surface Mount

-

150°C TJ

-

N-Channel

25pF @ 10V

-

-

-

-

-

SILICON

e1

yes

EAR99

4.5Ohm

TIN SILVER COPPER

8541.21.00.95

FET General Purpose Power

30V

MOSFET (Metal Oxide)

260

200mA

10

3

200mW Ta

200mW

15 ns

2.8 Ω @ 100mA, 10V

2.5V @ 1mA

200mA Ta

20ns

4V 10V

±20V

20 ns

90 ns

0.2A

30V

1.1mm

2.9mm

1.6mm

Lead Free

2SK2662 vs 2SK2731T146

Certification

Related parts for 2SK2662

2SK2011

N/A
2SK2967

TOSHIBA

in stock
2SK2750

TOSHIBA

in stock
2SK2685ZT-TR

HITACHI

in stock
2SK209-GR(TE85L,F)

Toshiba Semiconductor and Storage

JFET N-CH SOT23
2SK2394-7-FRD-TB-E

ON Semiconductor

JFET N-CH SC-59-3
2SK208-GR(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH S-MINI FET
2SK2103T100

Rohm Semiconductor

MOSFET N-CH 30V 2A SOT-89
2SK2731T146

Rohm Semiconductor

MOSFET N-CH 30V 200MA SOT-346

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2SK2662 Specification

Part Number	Manufacturers	Description	Stock	Price
2SK2662(Q) DISTI #2SK2662(Q)	Toshiba America Electronic Components	Trans MOSFET N-CH 500V 5A 3-Pin(3 Tab) TO-220NIS - RoHS: Not Compliant	0
2SK2662(Q) DISTI #2SK2662(Q)	Toshiba America Electronic Components		11396	1 $2.05 977 $0.7175 2092 $0.615
2SK2662(Q,T) DISTI #2SK2662(Q,T)	Toshiba America Electronic Components		1575	1 $2.05 196 $0.82 977 $0.7175
2SK2662(Q) DISTI #2SK2662(Q)	Chip 1 Exchange		16160
2SK2662(Q,T) DISTI #2SK2662(Q,T)	Chip 1 Exchange		2368

TOSHIBA 2SK2662

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