2SC5551AF-TD-E

ON Semiconductor 2SC5551AF-TD-E

Part Number:
2SC5551AF-TD-E
Manufacturer:
ON Semiconductor
Ventron No:
3585013-2SC5551AF-TD-E
Description:
TRANS NPN BIPO HI FREQ PCP
ECAD Model:
Datasheet:
2SC5551AF-TD-E

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Specifications
ON Semiconductor 2SC5551AF-TD-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SC5551AF-TD-E.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    6 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e6
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Bismuth (Sn/Bi)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1.3W
  • Terminal Form
    FLAT
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.3W
  • Case Connection
    COLLECTOR
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    300mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    135 @ 50mA 5V
  • Collector Emitter Breakdown Voltage
    30V
  • Max Frequency
    3.5GHz
  • Transition Frequency
    3500MHz
  • Collector Emitter Saturation Voltage
    300mV
  • Max Breakdown Voltage
    30V
  • Collector Base Voltage (VCBO)
    40V
  • Emitter Base Voltage (VEBO)
    2V
  • Continuous Collector Current
    300mA
  • Highest Frequency Band
    S B
  • Collector-Base Capacitance-Max
    4pF
  • Height
    1.5mm
  • Length
    4.5mm
  • Width
    2.5mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2SC5551AF-TD-E Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet 2SC5551AF-TD-E or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of 2SC5551AF-TD-E. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
2SC5551AF-TD-E More Descriptions
Trans GP BJT NPN 30V 0.3A 1300mW 4-Pin(3 Tab) SOT-89 T/R
RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz
RF Transistor 30V 300mA fT;3.5GHz typ. NPN Single PCP
ON Semi 2SC5551AF-TD-E NPN RF Bipolar Transistor, 0.3 A, 30 V, 3-Pin PCP | ON Semiconductor 2SC5551AF-TD-E
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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