ON Semiconductor 2SA2125-TD-H
- Part Number:
- 2SA2125-TD-H
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2467052-2SA2125-TD-H
- Description:
- TRANS PNP 50V 3A PCP
- ECAD Model:
-
- Datasheet:
- 2SA2125-TD-H
ON Semiconductor 2SA2125-TD-H technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SA2125-TD-H.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin/Bismuth (Sn/Bi)
- SubcategoryOther Transistors
- Max Power Dissipation3.5W
- Reach Compliance Codenot_compliant
- Pin Count3
- ConfigurationSingle
- Power - Max3.5W
- Halogen FreeHalogen Free
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA 2V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 2A
- Collector Emitter Breakdown Voltage50V
- Frequency - Transition390MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- hFE Min200
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SA2125-TD-H Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
2SA2125-TD-H Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SA2125-TD-H Applications
There are a lot of ON Semiconductor
2SA2125-TD-H applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
2SA2125-TD-H Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SA2125-TD-H Applications
There are a lot of ON Semiconductor
2SA2125-TD-H applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SA2125-TD-H More Descriptions
Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP
Trans GP BJT PNP 50V 3A 4-Pin(3 Tab) PCP T/R - Tape and Reel
Power Bipolar Transistor, 3A I(C), 1-Element, PNP
Trans GP BJT PNP 50V 3A 4-Pin(3 Tab) PCP T/R - Tape and Reel
Power Bipolar Transistor, 3A I(C), 1-Element, PNP
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