ON Semiconductor 2SA1593T-E
- Part Number:
- 2SA1593T-E
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2467214-2SA1593T-E
- Description:
- TRANS PNP 100V 2A TP
- ECAD Model:
-
- Datasheet:
- 2SA1593T-E
ON Semiconductor 2SA1593T-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SA1593T-E.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2012
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin/Bismuth (Sn/Bi)
- Max Power Dissipation1W
- Base Part Number2SA1593
- Pin Count3
- Power - Max1W
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage100V
- Frequency - Transition120MHz
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)6V
- hFE Min100
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SA1593T-E Overview
This device has a DC current gain of 200 @ 100mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A maximum collector current of 2A volts is possible.
2SA1593T-E Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 6V
2SA1593T-E Applications
There are a lot of ON Semiconductor
2SA1593T-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 200 @ 100mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A maximum collector current of 2A volts is possible.
2SA1593T-E Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 6V
2SA1593T-E Applications
There are a lot of ON Semiconductor
2SA1593T-E applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SA1593T-E More Descriptions
Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
100V 15W 2A 200@100mA5V 120MHz PNP 130mV@1A100mA 150¡Í@(Tj) IP Bipolar Transistors - BJT ROHS
Single PNP Bipolar Transistor, -100 V, -2 A
Bipolar Transistors - BJT BIP PNP 2A 100V
Trans GP BJT PNP 100V 2A 1000mW 3-Pin(3 Tab) TP Bag
Small Signal Bipolar Transistor, 100V V(BR)CEO, Silicon
Compliant 100 PNP Lead Free Bulk TO-251-3 3 EOL (Last Updated: 6 days ago)
100V 15W 2A 200@100mA5V 120MHz PNP 130mV@1A100mA 150¡Í@(Tj) IP Bipolar Transistors - BJT ROHS
Single PNP Bipolar Transistor, -100 V, -2 A
Bipolar Transistors - BJT BIP PNP 2A 100V
Trans GP BJT PNP 100V 2A 1000mW 3-Pin(3 Tab) TP Bag
Small Signal Bipolar Transistor, 100V V(BR)CEO, Silicon
Compliant 100 PNP Lead Free Bulk TO-251-3 3 EOL (Last Updated: 6 days ago)
The three parts on the right have similar specifications to 2SA1593T-E.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishMax Power DissipationBase Part NumberPin CountPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeMountSupplier Device PackageMax Operating TemperaturePolarityElement ConfigurationGain Bandwidth ProductVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Surface MountSubcategoryConfigurationHalogen FreePolarity/Channel TypeVoltage - Rated DCCurrent RatingMax Breakdown VoltageView Compare
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2SA1593T-EACTIVE (Last Updated: 1 week ago)2 WeeksThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3SILICON150°C TJBulk2012e6yesActive1 (Unlimited)EAR99Tin/Bismuth (Sn/Bi)1W2SA159331WPNP100V2A200 @ 100mA 5V100nA ICBO600mV @ 100mA, 1A100V120MHz120V6V100ROHS3 CompliantLead Free----------------- -
--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--150°C TJTube2009--Obsolete1 (Unlimited)--1W--1WPNP1V5A160 @ 500mA 2V100nA ICBO1V @ 100mA, 4A20V170MHz35V8V160RoHS CompliantLead FreeSurface MountPW-MOLD150°CPNPSingle170MHz20V5A--------
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ACTIVE (Last Updated: 18 hours ago)2 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-150°C TJTape & Reel (TR)2012e6yesActive1 (Unlimited)EAR99Tin/Bismuth (Sn/Bi)1W2SA155231WPNP160V1.5A200 @ 100mA 5V1μA ICBO500mV @ 50mA, 500mA160V120MHz180V6V100ROHS3 CompliantLead Free--------YESOther TransistorsSingleHalogen FreePNP---
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--Surface MountTO-236-3, SC-59, SOT-23-3--150°C TJTape & Reel (TR)2003--Obsolete1 (Unlimited)--200mW2SA10350-200mWPNP600mV50mA260 @ 2mA 5V1μA600mV @ 10mA, 100mA55V200MHz---RoHS CompliantLead FreeSurface MountMini3-G1----55V50mA------55V-50mA55V
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