Nexperia USA Inc. 2N7002BKV,115

Name: 2N7002BKV,115
Brand: Nexperia USA Inc.
SKU: 2847747-2N7002BKV,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7002BKV,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2847747-2N7002BKV,115

Description:: MOSFET 2N-CH 60V 0.34A SOT666

ECAD Model:

Datasheet:: 2N7002BKV,115

Specifications

Nexperia USA Inc. 2N7002BKV,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. 2N7002BKV,115.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchMOS™
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
1.6Ohm
Additional Feature
LOGIC LEVEL COMPATIBLE
Max Power Dissipation
350mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
525mW
Turn On Delay Time
5 ns
Power - Max
350mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
0.6nC @ 4.5V
Rise Time
6ns
Fall Time (Typ)
7 ns
Turn-Off Delay Time
12 ns
Continuous Drain Current (ID)
340mA
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Drain Current-Max (Abs) (ID)
0.34A
Drain to Source Breakdown Voltage
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description:
The 2N7002BKV Series Dual N-Channel 60 V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET is a Nexperia transistor designed for use in a variety of applications. It is a dual N-channel FET with a maximum voltage of 60 V and a maximum current of 1.6 Ohms. It has a power dissipation of 350 mW and a gate capacitance of 0.6nC. It is packaged in a SOT666 package.

Features:
• Dual N-Channel FET
• Maximum Voltage: 60 V
• Maximum Current: 1.6 Ohms
• Power Dissipation: 350 mW
• Gate Capacitance: 0.6nC
• Package: SOT666

Applications:
The 2N7002BKV Series Dual N-Channel 60 V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET is suitable for a variety of applications, including power management, motor control, and signal conditioning. It can be used in automotive, industrial, and consumer electronics.

2N7002BKV,115 More Descriptions

Transistor MOSFET Array Dual N-CH 60V 6-Pin 0.34A SOT-23 T/RAvnet Japan
2N7002BKV - 60 V, 340 mA dual N-channel Trench MOSFET
2N7002BKV Series Dual N-Channel 60V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET - SOT-666
MOSFET ARRAY, DUAL N CH, 60V, 340MA, 6-SOT-666; Transistor Polarity:N Channel; Continuous Drain Current Id:340mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V ;RoHS Compliant: Yes
MOSFET,NN CH,60V,0.34A,SOT666; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 340mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 525mW; Transistor Case Style: SOT-666; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 340mA; Current Id Max: 340mA; Drain Source Voltage Vds, N Channel: 60V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 1ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C

Certification