Vishay Siliconix 2N6661JTVP02

2N6661JTVP02 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 860mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.86A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 90V in order to maintain normal operation.Operating this transistor requires a 90V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.

2N6661JTVP02 Features
a continuous drain current (ID) of 860mA
a 90V drain to source voltage (Vdss)


2N6661JTVP02 Applications
There are a lot of Vishay Siliconix
2N6661JTVP02 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools