ON Semiconductor 2N6111G
- Part Number:
- 2N6111G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2464726-2N6111G
- Description:
- TRANS PNP 30V 7A TO220AB
- ECAD Model:
-
- Datasheet:
- 2N6111G
ON Semiconductor 2N6111G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6111G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time2 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)260
- Current Rating-7A
- Frequency10MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6111
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation40W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product10MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current7A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3A 4V
- Current - Collector Cutoff (Max)1mA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic3.5V @ 3A, 7A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency10MHz
- Collector Emitter Saturation Voltage3.5V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)5V
- hFE Min30
- Height15.75mm
- Length10.28mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N6111G Overview
DC current gain in this device equals 30 @ 3A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 3A, 7A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -7A current rating.As a result, the part has a transition frequency of 10MHz.In extreme cases, the collector current can be as low as 7A volts.
2N6111G Features
the DC current gain for this device is 30 @ 3A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is -7A
a transition frequency of 10MHz
2N6111G Applications
There are a lot of ON Semiconductor
2N6111G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 30 @ 3A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 3.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 3A, 7A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -7A current rating.As a result, the part has a transition frequency of 10MHz.In extreme cases, the collector current can be as low as 7A volts.
2N6111G Features
the DC current gain for this device is 30 @ 3A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is -7A
a transition frequency of 10MHz
2N6111G Applications
There are a lot of ON Semiconductor
2N6111G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6111G More Descriptions
ON Semi 2N6111G PNP Bipolar Transistor; 7 A; 30 V; 3-Pin TO-220
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7.0 A, 30 V PNP Bipolar Power Transistor
30V 40W 7A 30@3A4V 10MHz 3.5V@7A3A PNP -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, -30V, -7A, TO-220AB; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:10MHz; Power Dissipation Pd:40W; DC Collector Current:-7A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
Trans GP BJT PNP 30V 7A 40000mW 3-Pin(3 Tab) TO-220AB Tube
2N Series 30 V 7 A PNP Complementary Silicon Plastic Power Transistor - TO-220AB
7.0 A, 30 V PNP Bipolar Power Transistor
30V 40W 7A 30@3A4V 10MHz 3.5V@7A3A PNP -65¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANSISTOR, PNP, -30V, -7A, TO-220AB; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:10MHz; Power Dissipation Pd:40W; DC Collector Current:-7A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
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