ON Semiconductor 2N6028G
- Part Number:
- 2N6028G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2495156-2N6028G
- Description:
- THYRISTOR PROG UNIJUNCT 40V TO92
- Datasheet:
- 2N6028G
ON Semiconductor 2N6028G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6028G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
- Contact PlatingCopper, Silver, Tin
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Number of Pins3
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Max Operating Temperature100°C
- Min Operating Temperature-50°C
- SubcategoryProgrammable Unijunction Transistors
- Voltage - Rated DC40V
- Terminal PositionBOTTOM
- Terminal FormTHROUGH-HOLE
- Peak Reflow Temperature (Cel)260
- Current Rating150mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation300mW
- Voltage - Output11V
- Max Repetitive Reverse Voltage (Vrrm)40V
- Trigger Device TypePROGRAMMABLE UJT
- On-State Current-Max150A
- Current - Peak150nA
- Current - Valley (Iv)25μA
- Current - Gate to Anode Leakage (Igao)10nA
- Voltage - Offset (Vt)600mV
- Height5.33mm
- Length5.2mm
- Width4.19mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
2N6028G Description
The 2N6028G is designed to enable the engineer to "program" unijunction characteristics such as
RBB, η, IV, and IP by merely selecting two resistor values. The application includes
thyristor-trigger, oscillator, pulse, and timing circuits. These devices may also be used
in special thyristor applications due to the availability of an anode gate. Supplied in an
inexpensive TO-92 plastic package for high-volume requirements, this package is
readily adaptable for use in automatic insertion equipment
2N6028G Features Programmable — RBB, η, IV, and IP. Low On-State Voltage — 1.5 Volts Maximum @ IF = 50 mA Low Gate to Anode Leakage Current — 10 nA Maximum High Peak Output Voltage — 11 Volts Typical Low Offset Voltage — 0.35 Volt Typical (RG = 10 k ohms)
2N6028G Features Programmable — RBB, η, IV, and IP. Low On-State Voltage — 1.5 Volts Maximum @ IF = 50 mA Low Gate to Anode Leakage Current — 10 nA Maximum High Peak Output Voltage — 11 Volts Typical Low Offset Voltage — 0.35 Volt Typical (RG = 10 k ohms)
2N6028G More Descriptions
Transistor; Programmable Unijunction; 40 V; 300 mW | ON Semiconductor 2N6028G
Unijunction Transistor; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Mounting Type:Through Hole; On State RMS Current, IT(rms):0.01A; Voltage Rating:40V ;RoHS Compliant: Yes
UNIJUNCTION TRANSISTOR, TO-92; Repetitive Peak Forward Current Itrm: 2A; Peak Emitter Current: 0.08µA; Valley Current Iv: 150µA; Transistor Case Style: TO-92; No. of Pins: 3 Pin; Operating Temperature Max: 100°C; Product Range
Unijunction Transistor; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Mounting Type:Through Hole; On State RMS Current, IT(rms):0.01A; Voltage Rating:40V ;RoHS Compliant: Yes
UNIJUNCTION TRANSISTOR, TO-92; Repetitive Peak Forward Current Itrm: 2A; Peak Emitter Current: 0.08µA; Valley Current Iv: 150µA; Transistor Case Style: TO-92; No. of Pins: 3 Pin; Operating Temperature Max: 100°C; Product Range
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