2N5550RLRAG

ON Semiconductor 2N5550RLRAG

Part Number:
2N5550RLRAG
Manufacturer:
ON Semiconductor
Ventron No:
2467960-2N5550RLRAG
Description:
TRANS NPN 140V 0.6A TO-92
ECAD Model:
Datasheet:
2N5550, 5551

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Specifications
ON Semiconductor 2N5550RLRAG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5550RLRAG.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    O-PBCY-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    625mW
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 5mA, 50mA
  • Voltage - Collector Emitter Breakdown (Max)
    140V
  • Current - Collector (Ic) (Max)
    600mA
  • Transition Frequency
    100MHz
  • Frequency - Transition
    300MHz
  • RoHS Status
    ROHS3 Compliant
Description
2N5550RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 5mA, 50mA.A transition frequency of 100MHz is present in the part.A 140V maximal voltage - Collector Emitter Breakdown is present in the device.

2N5550RLRAG Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz


2N5550RLRAG Applications
There are a lot of Rochester Electronics, LLC
2N5550RLRAG applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N5550RLRAG More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 60 @ 10mA 5V 100nA ICBO 625mW 300MHz
SMALL SIGNAL BIPOLAR TRANSISTOR
2N5550RLRAG, SINGLE BIPOLAR TRANSISTORS;
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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