ON Semiconductor 2N5550RLRAG
- Part Number:
- 2N5550RLRAG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2467960-2N5550RLRAG
- Description:
- TRANS NPN 140V 0.6A TO-92
- Datasheet:
- 2N5550, 5551
ON Semiconductor 2N5550RLRAG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5550RLRAG.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max625mW
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)140V
- Current - Collector (Ic) (Max)600mA
- Transition Frequency100MHz
- Frequency - Transition300MHz
- RoHS StatusROHS3 Compliant
2N5550RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 5mA, 50mA.A transition frequency of 100MHz is present in the part.A 140V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5550RLRAG Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5550RLRAG Applications
There are a lot of Rochester Electronics, LLC
2N5550RLRAG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 5mA, 50mA.A transition frequency of 100MHz is present in the part.A 140V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5550RLRAG Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5550RLRAG Applications
There are a lot of Rochester Electronics, LLC
2N5550RLRAG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5550RLRAG More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 60 @ 10mA 5V 100nA ICBO 625mW 300MHz
SMALL SIGNAL BIPOLAR TRANSISTOR
2N5550RLRAG, SINGLE BIPOLAR TRANSISTORS;
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 60 @ 10mA 5V 100nA ICBO 625mW 300MHz
SMALL SIGNAL BIPOLAR TRANSISTOR
2N5550RLRAG, SINGLE BIPOLAR TRANSISTORS;
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