ON Semiconductor 2N5460G

Name: 2N5460G
Brand: ON Semiconductor
SKU: 3072117-2N5460G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N5460G

Manufacturer:: ON Semiconductor

Ventron No:: 3072117-2N5460G

Description:: JFET P-CH 40V 0.35W TO92

ECAD Model:

Datasheet:: 2N5460G

Specifications

ON Semiconductor 2N5460G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N5460G.

Lifecycle Status
OBSOLETE (Last Updated: 8 hours ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~135°C TJ
Packaging
Bulk
Published
2001
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8541.21.00.95
Subcategory
FET General Purpose Small Signal
Voltage - Rated DC
-40V
Max Power Dissipation
350mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
10mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
2N5460
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
200mW
Power - Max
350mW
FET Type
P-Channel
Transistor Application
AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds
7pF @ 15V
Gate to Source Voltage (Vgs)
40V
FET Technology
JUNCTION
Feedback Cap-Max (Crss)
2 pF
Current - Drain (Idss) @ Vds (Vgs=0)
1mA @ 15V
Voltage - Cutoff (VGS off) @ Id
750mV @ 1μA
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

2N5460G Description 2N5460G transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes 2N5460G MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor 2N5460G has the common source configuration. 2N5460G Features Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging 2N5460G Applications ISM applications DC large signal applications Power factor correction Electronic lamp ballasts Flat panel display

2N5460G More Descriptions

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92
JFET P-CH 40V 0.35W TO92
Small Signal JFET P-Channel
SS T092 JFET PCH 40V
MOSFET N-CH 30V 69A SO8FL
JFETs 40V 10mA

Product Comparison

The three parts on the right have similar specifications to 2N5460G.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

HTS Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Power - Max

FET Type

Transistor Application

Input Capacitance (Ciss) (Max) @ Vds

Gate to Source Voltage (Vgs)

FET Technology

Feedback Cap-Max (Crss)

Current - Drain (Idss) @ Vds (Vgs=0)

Voltage - Cutoff (VGS off) @ Id

RoHS Status

Lead Free

Voltage - Cutoff (VGS off) @ Id:

Voltage - Breakdown (V(BR)GSS):

Supplier Device Package:

Series:

Resistance - RDS(On):

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

FET Type:

Drain to Source Voltage (Vdss):

Current - Drain (Idss) @ Vds (Vgs=0):

View Compare
2N5460G

ON Semiconductor

OBSOLETE (Last Updated: 8 hours ago)

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

SILICON

-65°C~135°C TJ

Bulk

2001

e1

yes

Obsolete

1 (Unlimited)

3

Tin/Silver/Copper (Sn/Ag/Cu)

8541.21.00.95

FET General Purpose Small Signal

-40V

350mW

BOTTOM

260

10mA

40

2N5460

3

Not Qualified

1

Single

DEPLETION MODE

200mW

350mW

P-Channel

AMPLIFIER

7pF @ 15V

40V

JUNCTION

2 pF

1mA @ 15V

750mV @ 1μA

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N5461

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1V @ 1µA

40V

TO-92-3

-

-

350mW

Bulk

TO-226-3, TO-92-3 (TO-226AA)

-55°C ~ 150°C (TJ)

Through Hole

7pF @ 15V

P-Channel

-

2mA @ 15V

2N5460G vs 2N5461
2N5457

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

500mV @ 10nA

25V

TO-92-3

-

-

625mW

Bulk

TO-226-3, TO-92-3 (TO-226AA)

-55°C ~ 150°C (TJ)

Through Hole

7pF @ 15V

N-Channel

-

1mA @ 15V

2N5460G vs 2N5457
2N5462

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.8V @ 1µA

40V

TO-92-3

-

-

350mW

Bulk

TO-226-3, TO-92-3 (TO-226AA)

-55°C ~ 150°C (TJ)

Through Hole

7pF @ 15V

P-Channel

-

4mA @ 15V

2N5460G vs 2N5462

Certification

Related parts for 2N5460G

CP210-2N5486-CT

Central Semiconductor Corp

CP210-2N5486-CT datasheet pdf and Transistors - JFETs product details from Central Semiconductor Corp stock available at Ventron
CP232V-2N5486-CT

Central Semiconductor Corp

CP232V-2N5486-CT datasheet pdf and Transistors - JFETs product details from Central Semiconductor Corp stock available at Ventron
2N5461

Fairchild/ON Semiconductor

JFET P-CH 40V 0.35W TO92
2N5457

Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92
2N5462

Fairchild/ON Semiconductor

JFET P-CH 40V 0.35W TO92

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ON Semiconductor 2N5460G

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