Microsemi Corporation 2N2605

Name: 2N2605
Brand: Microsemi Corporation
SKU: 3813585-2N2605
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N2605

Manufacturer:: Microsemi Corporation

Ventron No:: 3813585-2N2605

Description:: TRANS PNP 60V 0.03A TO-46

ECAD Model:

Datasheet:: 2N2605

Specifications

Microsemi Corporation 2N2605 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N2605.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AB, TO-46-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-46-3
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
400mW
Number of Elements
1
Polarity
PNP
Power Dissipation
400mW
Power - Max
400mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
30mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 5V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
60V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
30mA
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

2N2605 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 500μA, 10mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The product comes in the supplier device package of TO-46-3.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 30mA volts at its maximum.

2N2605 Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
the supplier device package of TO-46-3

2N2605 Applications
There are a lot of Microsemi Corporation
2N2605 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N2605 More Descriptions

Trans GP BJT PNP 60V 0.03A 3-Pin TO-46
60 V PNP Si SMALL SIGNAL TRANSISTOR
Bipolar Transistors - BJT BJTs
Small Signal Bipolar Transistor, 0.03A I(C), 60V V(Br)Ceo, 1-Element, Pnp, Silicon, To-206Ab Rohs Compliant: Yes |Microchip 2N2605

Certification