Microchip Technology 25AA02E64T-I/SN
Part Number:
- 25AA02E64T-I/SN
Manufacturer:
- Microchip Technology
Ventron No:
- 3719100-25AA02E64T-I/SN
Description:
- IC EEPROM 2KBIT 10MHZ 8SOIC
Datasheet:
- 25AA02E64T-I/SN
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Part Overview
Description
The Microchip Technology Inc. 25AA02E48/25AA02E64 (25AA02EXX) is a 2Kbit Serial Electrically Erasable Programmable Read-Only Memory (EEPROM). The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input.
Features
Preprogrammed Globally Unique, 48-bit or 64-bit Node Address
Compatible with EUI-48TM and EUI-64™
10 MHz Maximum Clock Frequency
Low-Power CMOS Technology:
Maximum Write Current: 5 mA at 5.5V
Read Current: 5 mA at 5.5V, 10 MHz
Standby Current: 1 μA at 2.5V
256 x 8-bit Organization
Write Page Mode (up to 16 bytes)
Sequential Read
Self-Timed Erase and Write Cycles (5 ms maximum)
Block Write Protection: Protect none, 1/4, 1/2 or all of array
Built-in Write Protection:
Power-on/off data protection circuitry
Write enable latch
Write-protect pin
High Reliability:
Endurance: 1,000,000 erase/write cycles
Data retention: >200 years
Applications
Industrial
Automotive
Consumer
Medical
Communications
The Microchip Technology Inc. 25AA02E48/25AA02E64 (25AA02EXX) is a 2Kbit Serial Electrically Erasable Programmable Read-Only Memory (EEPROM). The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input.
Features
Preprogrammed Globally Unique, 48-bit or 64-bit Node Address
Compatible with EUI-48TM and EUI-64™
10 MHz Maximum Clock Frequency
Low-Power CMOS Technology:
Maximum Write Current: 5 mA at 5.5V
Read Current: 5 mA at 5.5V, 10 MHz
Standby Current: 1 μA at 2.5V
256 x 8-bit Organization
Write Page Mode (up to 16 bytes)
Sequential Read
Self-Timed Erase and Write Cycles (5 ms maximum)
Block Write Protection: Protect none, 1/4, 1/2 or all of array
Built-in Write Protection:
Power-on/off data protection circuitry
Write enable latch
Write-protect pin
High Reliability:
Endurance: 1,000,000 erase/write cycles
Data retention: >200 years
Applications
Industrial
Automotive
Consumer
Medical
Communications
Specifications
Microchip Technology 25AA02E64T-I/SN technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology 25AA02E64T-I/SN.
- Factory Lead Time27 Weeks
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishMatte Tin (Sn) - annealed
- TechnologyCMOS
- Voltage - Supply1.8V~5.5V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage2.5V
- Terminal Pitch1.27mm
- Reflow Temperature-Max (s)40
- Base Part Number25AA02E64
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)5.5V
- Power Supplies2/5V
- Supply Voltage-Min (Vsup)1.8V
- InterfaceSPI, Serial
- Memory Size2Kb 256 x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency10MHz
- Supply Current-Max0.005mA
- Memory FormatEEPROM
- Memory InterfaceSPI
- Organization256X8
- Memory Width8
- Write Cycle Time - Word, Page5ms
- Standby Current-Max0.000001A
- Memory Density2048 bit
- Screening LevelTS 16949
- Serial Bus TypeSPI
- Endurance1000000 Write/Erase Cycles
- Write Cycle Time-Max (tWC)5ms
- Data Retention Time-Min200
- Write ProtectionHARDWARE/SOFTWARE
- Height Seated (Max)1.75mm
- Length4.9mm
- Width3.9mm
- RoHS StatusROHS3 Compliant
Product Comparison
The three parts on the right have similar specifications to 25AA02E64T-I/SN.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)InterfaceMemory SizeMemory TypeOperating ModeClock FrequencySupply Current-MaxMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityScreening LevelSerial Bus TypeEnduranceWrite Cycle Time-Max (tWC)Data Retention Time-MinWrite ProtectionHeight Seated (Max)LengthWidthRoHS StatusSeriesReach Compliance CodeParallel/SerialSupplier Device PackageView Compare
-
25AA02E64T-I/SN27 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)YES-40°C~85°C TATape & Reel (TR)2010e3Active1 (Unlimited)8Matte Tin (Sn) - annealedCMOS1.8V~5.5VDUAL26012.5V1.27mm4025AA02E64R-PDSO-G8Not Qualified5.5V2/5V1.8VSPI, Serial2Kb 256 x 8Non-VolatileSYNCHRONOUS10MHz0.005mAEEPROMSPI256X885ms0.000001A2048 bitTS 16949SPI1000000 Write/Erase Cycles5ms200HARDWARE/SOFTWARE1.75mm4.9mm3.9mmROHS3 Compliant----- -
-Surface Mount8-WFDFN Exposed PadYES-40°C~125°C TATube--Active1 (Unlimited)8-CMOS1.8V~5.5VDUAL-15V0.5mm-25AA080CR-PDSO-N8-5.5V-4.5V-8Kb 1K x 8Non-VolatileSYNCHRONOUS10MHz-EEPROMSPI1KX885ms-8192 bitAEC-Q100; TS 16949SPI-5ms--0.8mm3mm2mm-Automotive, AEC-Q100compliantSERIAL- -
-Surface MountDie-0°C~70°C TATray--Active1 (Unlimited)--EEPROM1.8V~5.5V------25AA010A------1Kb 128 x 8Non-Volatile-10MHz-EEPROMSPI--5ms-----------ROHS3 Compliant---Die -
-Surface MountDie--40°C~85°C TATray--Active1 (Unlimited)--EEPROM1.8V~5.5V------25AA160A------16Kb 2K x 8Non-Volatile-10MHz-EEPROMSPI--5ms-----------ROHS3 Compliant---Die
Certification
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