1N5619

Microsemi Corporation 1N5619

Part Number:
1N5619
Manufacturer:
Microsemi Corporation
Ventron No:
2423587-1N5619
Description:
DIODE GEN PURP 600V 1A AXIAL
ECAD Model:
Datasheet:
1N5619

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Specifications
Microsemi Corporation 1N5619 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N5619.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    7 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    A, Axial
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY, METALLURGICALLY BONDED
  • HTS Code
    8541.10.00.80
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    500nA @ 600V
  • Voltage - Forward (Vf) (Max) @ If
    1.6V @ 3A
  • Case Connection
    ISOLATED
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    1A
  • Forward Voltage
    1.6V
  • Max Reverse Voltage (DC)
    600V
  • Average Rectified Current
    1A
  • Reverse Recovery Time
    250 ns
  • Peak Reverse Current
    500nA
  • Max Repetitive Reverse Voltage (Vrrm)
    600V
  • Capacitance @ Vr, F
    25pF @ 12V 1MHz
  • Peak Non-Repetitive Surge Current
    30A
  • Radiation Hardening
    Yes
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
1N5619 Overview
There is an average rectified current of 1A volts for this device.In terms of output current, 1A is the maximum value.In the datasheets, the peak reverse is 500nA, as indicated by the data chart.

1N5619 Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 500nA


1N5619 Applications
There are a lot of Microsemi Corporation
1N5619 applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5619 More Descriptions
Rectifier Diode, 1 Element, 1A, 600V V(Rrm), Silicon Rohs Compliant: Yes |Microchip 1N5619
Rectifier Diode Switching 600V 1A 250ns 2-Pin Case A Bag
1N5619 Series 600 V 1 A Through Hole Fast Recovery Glass Rectifier
DIODE GEN PURP 50V 15A DO203AB
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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