Infineon Technologies 1EDI60H12AHXUMA1
- Part Number:
- 1EDI60H12AHXUMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3735571-1EDI60H12AHXUMA1
- Description:
- IC IGBT DVR 1200V 8DSO
- Datasheet:
- 1EDI60H12AHXUMA1
Infineon Technologies 1EDI60H12AHXUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies 1EDI60H12AHXUMA1.
- Factory Lead Time26 Weeks
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.295, 7.50mm Width)
- Surface MountYES
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2014
- SeriesEiceDriver™
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- TechnologyMagnetic Coupling
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage5V
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G8
- Number of Channels1
- Rise / Fall Time (Typ)10ns 9ns
- Interface IC TypeBUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Turn On Time0.33 μs
- Output Peak Current Limit-Nom10A
- Supply Voltage1-Nom15V
- Turn Off Time0.33 μs
- Built-in ProtectionsOVER CURRENT; UNDER VOLTAGE
- Output Current Flow DirectionSOURCE SINK
- Voltage - Output Supply13V~35V
- Supply Voltage1-Max35V
- Height Seated (Max)2.65mm
- Length7.5mm
- Width6.3mm
- RoHS StatusROHS3 Compliant
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1EDI60H12AHXUMA1 More Descriptions
1EDI60H12AH Series 35 V 9.4 A Single Channel IGBT Gate Driver IC - PG-DSO-8-59
GATE DRIVER, IGBT/MOSFET, -40TO125DEG C; Driver Configuration:High Side; Peak Output Current:10A; Supply Voltage Min:3.3V; Supply Voltage Max:15V; Driver Case Style:SOIC; No. of Pins:8Pins; Input Delay:120ns; Output Delay:125ns; RoHS Compliant: Yes
1200 V single high-side gate driver IC with galvanic isolation, short circuit clamping and separate sink/source outputs, PG-DSO-8, RoHSInfineon SCT
EiceDRIVER Compact - Galvanically isolated single channel IGBT driver IC in a wide-body package with CT technology for 600V/1200V IGBT Modules. | Summary of Features: 1200V coreless Transformer isolated Driver ICs; 6 A rail-to-rail outputs; 300 mil wide-body package for 8 mm creepage distance; Separate source/sink outputs | Target Applications: drives; solar; telecom; batterycharger
GATE DRIVER, IGBT/MOSFET, -40TO125DEG C; Driver Configuration:High Side; Peak Output Current:10A; Supply Voltage Min:3.3V; Supply Voltage Max:15V; Driver Case Style:SOIC; No. of Pins:8Pins; Input Delay:120ns; Output Delay:125ns; RoHS Compliant: Yes
1200 V single high-side gate driver IC with galvanic isolation, short circuit clamping and separate sink/source outputs, PG-DSO-8, RoHSInfineon SCT
EiceDRIVER Compact - Galvanically isolated single channel IGBT driver IC in a wide-body package with CT technology for 600V/1200V IGBT Modules. | Summary of Features: 1200V coreless Transformer isolated Driver ICs; 6 A rail-to-rail outputs; 300 mil wide-body package for 8 mm creepage distance; Separate source/sink outputs | Target Applications: drives; solar; telecom; batterycharger
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