Sanan established a mini/micro LED R&D base
28 August 2023
China's LED epitaxial wafer and chip maker Sanan Optoelectronics is building a small/micro LED R&D base in central China with an investment of 12 billion yuan. With a total area of 477,700 square meters, the base will be used to develop GaN and GaAs mini/micro LED chips and 4K displays.
Sanan plans to build 1.61 million GaN mini/micro LED chips, 750,000 GaAs mini/micro LED chips and 84,000 4K displays at the base. The GaN division will include 720,000 Blu-ray mini LED chips, 90,000 Blu-ray micro LED chips, 720,000 green mini LED chips and 80,000 green micro LED chips, while the GaAs segment will include 660,000 red mini chips. Chip and 90,000 red micro LED chips.
According to sources, Taiwan-based PlayNitride plans to begin trial production of up to 3,000 micro LED epitaxial wafers at the end of August 2019. Samsung has chosen PlayNitride as the exclusive supplier of micro LED epitaxial wafers.
However, Sanan has not yet revealed when it will start producing GaN and GaAs micro LED chips, which means uncertainty in the development of micro LED technology.
Sanan plans to build 1.61 million GaN mini/micro LED chips, 750,000 GaAs mini/micro LED chips and 84,000 4K displays at the base. The GaN division will include 720,000 Blu-ray mini LED chips, 90,000 Blu-ray micro LED chips, 720,000 green mini LED chips and 80,000 green micro LED chips, while the GaAs segment will include 660,000 red mini chips. Chip and 90,000 red micro LED chips.
According to sources, Taiwan-based PlayNitride plans to begin trial production of up to 3,000 micro LED epitaxial wafers at the end of August 2019. Samsung has chosen PlayNitride as the exclusive supplier of micro LED epitaxial wafers.
However, Sanan has not yet revealed when it will start producing GaN and GaAs micro LED chips, which means uncertainty in the development of micro LED technology.
