ISSI, Integrated Silicon Solution Inc IS61QDB42M18-250M3
Número de pieza:
- IS61QDB42M18-250M3
Fabricante:
- ISSI, Integrated Silicon Solution Inc
Ventron Nro.:
- 3240520-IS61QDB42M18-250M3
Descripción:
- IC SRAM 36MBIT 250MHZ 165FBGA
Ficha de datos:
- IS61QDB42M18-250M3
Pago:

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Descripción general de la pieza
Description
The IS61QDB41M36 and IS61QDB42M18 are 36Mb synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of the K clock initiates the read/write operation, and all internal operations are self-timed.
Features
1M x 36 or 2M x 18
On-chip delay-locked loop (DLL) for wide data valid window
Separate read and write ports with concurrent read and write operations
Synchronous pipeline read with late write operation
Double data rate (DDR) interface for read and write input ports
Fixed 4-bit burst for read and write operations
Clock stop support
Two input clocks (K and K) for address and control registering at rising edges only
Two input clocks (C and C) for data output control
Two echo clocks (CQ and CQ) that are delivered simultaneously with data
1.8V core power supply and 1.5, 1.8V VDDQ used with 0.75, 0.9V VREF
HSTL input and output levels
Registered addresses, write and read controls, byte writes, data in, and data outputs
Full data coherency
Boundary scan using limited set of JTAG 1149.1 functions
Byte write capability
Fine ball grid array (FBGA) package
15mm x 17mm body size
1mm pitch
165-ball (11 x 15) array
Programmable impedance output drivers via 5x user-supplied precision resistor
Applications
Networking
Telecom
Datacom
Graphics
Industrial
The IS61QDB41M36 and IS61QDB42M18 are 36Mb synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of the K clock initiates the read/write operation, and all internal operations are self-timed.
Features
1M x 36 or 2M x 18
On-chip delay-locked loop (DLL) for wide data valid window
Separate read and write ports with concurrent read and write operations
Synchronous pipeline read with late write operation
Double data rate (DDR) interface for read and write input ports
Fixed 4-bit burst for read and write operations
Clock stop support
Two input clocks (K and K) for address and control registering at rising edges only
Two input clocks (C and C) for data output control
Two echo clocks (CQ and CQ) that are delivered simultaneously with data
1.8V core power supply and 1.5, 1.8V VDDQ used with 0.75, 0.9V VREF
HSTL input and output levels
Registered addresses, write and read controls, byte writes, data in, and data outputs
Full data coherency
Boundary scan using limited set of JTAG 1149.1 functions
Byte write capability
Fine ball grid array (FBGA) package
15mm x 17mm body size
1mm pitch
165-ball (11 x 15) array
Programmable impedance output drivers via 5x user-supplied precision resistor
Applications
Networking
Telecom
Datacom
Graphics
Industrial
Presupuesto
ISSI, Integrated Silicon Solution Inc IS61QDB42M18-250M3 Especificaciones técnicas, atributos, parámetros y piezas con especificaciones similares a ISSI, Integrated Silicon Solution Inc IS61QDB42M18-250M3.
- Mounting TypeSurface Mount
- Package / Case165-LBGA
- Surface MountYES
- Number of Pins165
- Operating Temperature0°C~70°C TA
- PackagingTray
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations165
- ECCN Code3A991.B.2.A
- Terminal FinishTIN SILVER COPPER
- Additional FeaturePIPELINED ARCHITECTURE
- HTS Code8542.32.00.41
- TechnologySRAM - Synchronous, QUAD
- Voltage - Supply1.71V~1.89V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count165
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.89V
- Power Supplies1.5/1.81.8V
- Supply Voltage-Min (Vsup)1.71V
- Memory Size36Mb 2M x 18
- Memory TypeVolatile
- Clock Frequency250MHz
- Supply Current-Max0.5mA
- Access Time7.5ns
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization2MX18
- Output Characteristics3-STATE
- Memory Width18
- Standby Current-Max0.2A
- Memory Density37748736 bit
- I/O TypeSEPARATE
- Standby Voltage-Min1.7V
- Height Seated (Max)1.7mm
- Length17mm
- Width15mm
- RoHS StatusNon-RoHS Compliant
Comparación de productos
Las tres partes de la derecha tienen especificaciones similares a IS61QDB42M18-250M3.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityI/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusFactory Lead TimeAccess Time (Max)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureOperating Supply VoltageInterfaceMax Supply VoltageMin Supply VoltageNumber of PortsNominal Supply CurrentWrite Cycle Time - Word, PageAddress Bus WidthDensitySync/AsyncWord SizeRadiation HardeningView Compare
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IS61QDB42M18-250M3Surface Mount165-LBGAYES1650°C~70°C TATraye1yesDiscontinued2 (1 Year)1653A991.B.2.ATIN SILVER COPPERPIPELINED ARCHITECTURE8542.32.00.41SRAM - Synchronous, QUAD1.71V~1.89VBOTTOM26011.8V1mm40165Not Qualified1.89V1.5/1.81.8V1.71V36Mb 2M x 18Volatile250MHz0.5mA7.5nsSRAMParallel2MX183-STATE180.2A37748736 bitSEPARATE1.7V1.7mm17mm15mmNon-RoHS Compliant------------------ -
Surface Mount165-LBGAYES1650°C~70°C TATray--Active3 (168 Hours)1653A991.B.2.A-PIPELINED ARCHITECTURE8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED165-1.89V-1.71V72Mb 4M x 18Volatile250MHz--SRAMParallel4MX18-18-75497472 bit--1.4mm17mm15mmROHS3 Compliant12 Weeks0.45 ns--------------- -
Surface Mount165-LBGAYES1650°C~70°C TATray--Active3 (168 Hours)1653A991.B.2.A-PIPELINED ARCHITECTURE8542.32.00.41SRAM - Synchronous, DDR II1.71V~1.89VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIED165-1.89V-1.71V72Mb 4M x 18Volatile300MHz--SRAMParallel4MX18-18-75497472 bit--1.4mm17mm15mmROHS3 Compliant12 Weeks0.45 ns--------------- -
Surface Mount44-BSOJ (0.400, 10.16mm Width)-44-40°C~85°C TATape & Reel (TR)--Active2 (1 Year)-----SRAM - Asynchronous4.5V~5.5V-----------4Mb 256K x 16Volatile--10nsSRAMParallel----------ROHS3 Compliant8 Weeks-44-SOJ85°C-40°C5VParallel5.5V4.5V150mA10ns18b4 MbAsynchronous16bNo
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